Surface imaging of III-V semiconductors by reflection electron microscopy and inner potential measurements

N. Yamamoto; John Spence

doi:10.1016/0040-6090(83)90547-3

Surface imaging of III-V semiconductors by reflection electron microscopy and inner potential measurements

N. Yamamoto, John Spence

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Surfaces of two III-V semiconductor materials have been examined at 120 kV by reflection electron microscopy (REM) at high spatial resolution. Surface steps were found to give characteristics contrast due to several diffraction effects, one of which is interference between the Bragg (B) and Bragg-Laue (BL) reflected beam at a step edge. The electron diffraction pattern from a step showed split lines from B and BL reflections, which provides a method of accurately measuring the mean inner potential of these materials. Electron energy loss spectra showed large surface and bulk plasmon peaks which mainly limit the spatial resolution of REM. The penetration depth in REM is given.

Original language	English (US)
Pages (from-to)	43-55
Number of pages	13
Journal	Thin Solid Films
Volume	104
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(83)90547-3
State	Published - Jun 17 1983

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/0040-6090(83)90547-3

Cite this

@article{b22743e0572c404e9f9f84a2d7aacc9c,

title = "Surface imaging of III-V semiconductors by reflection electron microscopy and inner potential measurements",

abstract = "Surfaces of two III-V semiconductor materials have been examined at 120 kV by reflection electron microscopy (REM) at high spatial resolution. Surface steps were found to give characteristics contrast due to several diffraction effects, one of which is interference between the Bragg (B) and Bragg-Laue (BL) reflected beam at a step edge. The electron diffraction pattern from a step showed split lines from B and BL reflections, which provides a method of accurately measuring the mean inner potential of these materials. Electron energy loss spectra showed large surface and bulk plasmon peaks which mainly limit the spatial resolution of REM. The penetration depth in REM is given.",

author = "N. Yamamoto and John Spence",

year = "1983",

month = jun,

day = "17",

doi = "10.1016/0040-6090(83)90547-3",

language = "English (US)",

volume = "104",

pages = "43--55",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Surface imaging of III-V semiconductors by reflection electron microscopy and inner potential measurements

AU - Yamamoto, N.

AU - Spence, John

PY - 1983/6/17

Y1 - 1983/6/17

N2 - Surfaces of two III-V semiconductor materials have been examined at 120 kV by reflection electron microscopy (REM) at high spatial resolution. Surface steps were found to give characteristics contrast due to several diffraction effects, one of which is interference between the Bragg (B) and Bragg-Laue (BL) reflected beam at a step edge. The electron diffraction pattern from a step showed split lines from B and BL reflections, which provides a method of accurately measuring the mean inner potential of these materials. Electron energy loss spectra showed large surface and bulk plasmon peaks which mainly limit the spatial resolution of REM. The penetration depth in REM is given.

AB - Surfaces of two III-V semiconductor materials have been examined at 120 kV by reflection electron microscopy (REM) at high spatial resolution. Surface steps were found to give characteristics contrast due to several diffraction effects, one of which is interference between the Bragg (B) and Bragg-Laue (BL) reflected beam at a step edge. The electron diffraction pattern from a step showed split lines from B and BL reflections, which provides a method of accurately measuring the mean inner potential of these materials. Electron energy loss spectra showed large surface and bulk plasmon peaks which mainly limit the spatial resolution of REM. The penetration depth in REM is given.

UR - http://www.scopus.com/inward/record.url?scp=0020141284&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020141284&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(83)90547-3

DO - 10.1016/0040-6090(83)90547-3

M3 - Article

AN - SCOPUS:0020141284

SN - 0040-6090

VL - 104

SP - 43

EP - 55

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Surface imaging of III-V semiconductors by reflection electron microscopy and inner potential measurements

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this