Surface imaging of III-V semiconductors by reflection electron microscopy and inner potential measurements

N. Yamamoto, John Spence

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Abstract

Surfaces of two III-V semiconductor materials have been examined at 120 kV by reflection electron microscopy (REM) at high spatial resolution. Surface steps were found to give characteristics contrast due to several diffraction effects, one of which is interference between the Bragg (B) and Bragg-Laue (BL) reflected beam at a step edge. The electron diffraction pattern from a step showed split lines from B and BL reflections, which provides a method of accurately measuring the mean inner potential of these materials. Electron energy loss spectra showed large surface and bulk plasmon peaks which mainly limit the spatial resolution of REM. The penetration depth in REM is given.

Original languageEnglish (US)
Pages (from-to)43-55
Number of pages13
JournalThin Solid Films
Volume104
Issue number1-2
DOIs
StatePublished - Jun 17 1983

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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