SURFACE CESIUM CONCENTRATIONS IN CESIUM-ION-BOMBARDED ELEMENTAL AND COMPOUND TARGETS.

J. E. Chelgren, W. Katz, V. R. Deline, C. A. Evans, R. J. Blattner, P. Williams

Research output: Contribution to journalArticle

50 Scopus citations

Abstract

Auger electron spectrometry has been used to characterize the atomic cesium concentration left bracket Cs right bracket //a at the surface of cesium ion bombarded silicon and various metal silicides. The Si** minus ion yield was found to be proportional to left bracket Cs right bracket //v**2**. **8**+36**0**. **1. Surface cesium concentration was also found to increase with increasing inverse sputtering yield S** minus **1 of the substrate. Deviations from a linear dependence of left bracket Cs right bracket //v on S** minus **1 are ascribed to differential sputtering effects.

Original languageEnglish (US)
Pages (from-to)324-327
Number of pages4
JournalJ VAC SCI TECHNOL
Volume16
Issue number2
DOIs
StatePublished - Jan 1 1979
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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