SURFACE CESIUM CONCENTRATIONS IN CESIUM-ION-BOMBARDED ELEMENTAL AND COMPOUND TARGETS.

J. E. Chelgren, W. Katz, V. R. Deline, C. A. Evans, R. J. Blattner, Peter Williams

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

Auger electron spectrometry has been used to characterize the atomic cesium concentration left bracket Cs right bracket //a at the surface of cesium ion bombarded silicon and various metal silicides. The Si** minus ion yield was found to be proportional to left bracket Cs right bracket //v**2**. **8**+36**0**. **1. Surface cesium concentration was also found to increase with increasing inverse sputtering yield S** minus **1 of the substrate. Deviations from a linear dependence of left bracket Cs right bracket //v on S** minus **1 are ascribed to differential sputtering effects.

Original languageEnglish (US)
Pages (from-to)324-327
Number of pages4
JournalJ Vac Sci Technol
Volume16
Issue number2
DOIs
StatePublished - Mar 1979
Externally publishedYes

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Cesium
Sputtering
Ions
Silicides
Spectrometry
Silicon
Electrons
Substrates
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

SURFACE CESIUM CONCENTRATIONS IN CESIUM-ION-BOMBARDED ELEMENTAL AND COMPOUND TARGETS. / Chelgren, J. E.; Katz, W.; Deline, V. R.; Evans, C. A.; Blattner, R. J.; Williams, Peter.

In: J Vac Sci Technol, Vol. 16, No. 2, 03.1979, p. 324-327.

Research output: Contribution to journalArticle

Chelgren, JE, Katz, W, Deline, VR, Evans, CA, Blattner, RJ & Williams, P 1979, 'SURFACE CESIUM CONCENTRATIONS IN CESIUM-ION-BOMBARDED ELEMENTAL AND COMPOUND TARGETS.', J Vac Sci Technol, vol. 16, no. 2, pp. 324-327. https://doi.org/10.1116/1.569939
Chelgren, J. E. ; Katz, W. ; Deline, V. R. ; Evans, C. A. ; Blattner, R. J. ; Williams, Peter. / SURFACE CESIUM CONCENTRATIONS IN CESIUM-ION-BOMBARDED ELEMENTAL AND COMPOUND TARGETS. In: J Vac Sci Technol. 1979 ; Vol. 16, No. 2. pp. 324-327.
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