SURFACE CESIUM CONCENTRATIONS IN CESIUM-ION-BOMBARDED ELEMENTAL AND COMPOUND TARGETS.

J. E. Chelgren; W. Katz; V. R. Deline; C. A. Evans; R. J. Blattner; P. Williams

doi:10.1116/1.569939

SURFACE CESIUM CONCENTRATIONS IN CESIUM-ION-BOMBARDED ELEMENTAL AND COMPOUND TARGETS.

J. E. Chelgren, W. Katz, V. R. Deline, C. A. Evans, R. J. Blattner, P. Williams

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

Auger electron spectrometry has been used to characterize the atomic cesium concentration left bracket Cs right bracket //a at the surface of cesium ion bombarded silicon and various metal silicides. The Si** minus ion yield was found to be proportional to left bracket Cs right bracket //v**2**. **8**+36**0**. **1. Surface cesium concentration was also found to increase with increasing inverse sputtering yield S** minus **1 of the substrate. Deviations from a linear dependence of left bracket Cs right bracket //v on S** minus **1 are ascribed to differential sputtering effects.

Original language	English (US)
Pages (from-to)	324-327
Number of pages	4
Journal	J VAC SCI TECHNOL
Volume	16
Issue number	2
DOIs	https://doi.org/10.1116/1.569939
State	Published - 1979
Externally published	Yes

ASJC Scopus subject areas

General Engineering

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title = "SURFACE CESIUM CONCENTRATIONS IN CESIUM-ION-BOMBARDED ELEMENTAL AND COMPOUND TARGETS.",

abstract = "Auger electron spectrometry has been used to characterize the atomic cesium concentration left bracket Cs right bracket //a at the surface of cesium ion bombarded silicon and various metal silicides. The Si** minus ion yield was found to be proportional to left bracket Cs right bracket //v**2**. **8**+36**0**. **1. Surface cesium concentration was also found to increase with increasing inverse sputtering yield S** minus **1 of the substrate. Deviations from a linear dependence of left bracket Cs right bracket //v on S** minus **1 are ascribed to differential sputtering effects.",

author = "Chelgren, {J. E.} and W. Katz and Deline, {V. R.} and Evans, {C. A.} and Blattner, {R. J.} and P. Williams",

year = "1979",

doi = "10.1116/1.569939",

language = "English (US)",

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AU - Katz, W.

AU - Deline, V. R.

AU - Evans, C. A.

AU - Blattner, R. J.

AU - Williams, P.

PY - 1979

Y1 - 1979

N2 - Auger electron spectrometry has been used to characterize the atomic cesium concentration left bracket Cs right bracket //a at the surface of cesium ion bombarded silicon and various metal silicides. The Si** minus ion yield was found to be proportional to left bracket Cs right bracket //v**2**. **8**+36**0**. **1. Surface cesium concentration was also found to increase with increasing inverse sputtering yield S** minus **1 of the substrate. Deviations from a linear dependence of left bracket Cs right bracket //v on S** minus **1 are ascribed to differential sputtering effects.

AB - Auger electron spectrometry has been used to characterize the atomic cesium concentration left bracket Cs right bracket //a at the surface of cesium ion bombarded silicon and various metal silicides. The Si** minus ion yield was found to be proportional to left bracket Cs right bracket //v**2**. **8**+36**0**. **1. Surface cesium concentration was also found to increase with increasing inverse sputtering yield S** minus **1 of the substrate. Deviations from a linear dependence of left bracket Cs right bracket //v on S** minus **1 are ascribed to differential sputtering effects.

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SURFACE CESIUM CONCENTRATIONS IN CESIUM-ION-BOMBARDED ELEMENTAL AND COMPOUND TARGETS.

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