Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

Yukiko Yamada-Takamura, Z. T. Wang, Y. Fujikawa, T. Sakurai, Q. K. Xue, J. Tolle, P. L. Liu, Andrew Chizmeshya, John Kouvetakis, I. S T Tsong

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Abstract

Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB2 buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB2(0001) clarify the origin of the N polarity.

Original languageEnglish (US)
Article number266105
JournalPhysical Review Letters
Volume95
Issue number26
DOIs
StatePublished - Dec 31 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Yamada-Takamura, Y., Wang, Z. T., Fujikawa, Y., Sakurai, T., Xue, Q. K., Tolle, J., Liu, P. L., Chizmeshya, A., Kouvetakis, J., & Tsong, I. S. T. (2005). Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers. Physical Review Letters, 95(26), [266105]. https://doi.org/10.1103/PhysRevLett.95.266105