Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

Yukiko Yamada-Takamura; Z. T. Wang; Y. Fujikawa; T. Sakurai; Q. K. Xue; J. Tolle; P. L. Liu; Andrew Chizmeshya; John Kouvetakis; I. S T Tsong

doi:10.1103/PhysRevLett.95.266105

Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

Yukiko Yamada-Takamura, Z. T. Wang, Y. Fujikawa, T. Sakurai, Q. K. Xue, J. Tolle, P. L. Liu, Andrew Chizmeshya, John Kouvetakis, I. S T Tsong

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Abstract

Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB2 buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB2(0001) clarify the origin of the N polarity.

Original language	English (US)
Article number	266105
Journal	Physical Review Letters
Volume	95
Issue number	26
DOIs	https://doi.org/10.1103/PhysRevLett.95.266105
State	Published - Dec 31 2005

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General Physics and Astronomy

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title = "Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers",

abstract = "Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB2 buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB2(0001) clarify the origin of the N polarity.",

author = "Yukiko Yamada-Takamura and Wang, {Z. T.} and Y. Fujikawa and T. Sakurai and Xue, {Q. K.} and J. Tolle and Liu, {P. L.} and Andrew Chizmeshya and John Kouvetakis and Tsong, {I. S T}",

year = "2005",

month = dec,

day = "31",

doi = "10.1103/PhysRevLett.95.266105",

language = "English (US)",

volume = "95",

journal = "Physical Review Letters",

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T1 - Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

AU - Yamada-Takamura, Yukiko

AU - Wang, Z. T.

AU - Fujikawa, Y.

AU - Sakurai, T.

AU - Xue, Q. K.

AU - Tolle, J.

AU - Liu, P. L.

AU - Chizmeshya, Andrew

AU - Kouvetakis, John

AU - Tsong, I. S T

PY - 2005/12/31

Y1 - 2005/12/31

N2 - Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB2 buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB2(0001) clarify the origin of the N polarity.

AB - Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB2 buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB2(0001) clarify the origin of the N polarity.

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JO - Physical Review Letters

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ER -

Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

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