Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

Yukiko Yamada-Takamura, Z. T. Wang, Y. Fujikawa, T. Sakurai, Q. K. Xue, J. Tolle, P. L. Liu, Andrew Chizmeshya, John Kouvetakis, I. S T Tsong

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB2 buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB2(0001) clarify the origin of the N polarity.

Original languageEnglish (US)
Article number266105
JournalPhysical Review Letters
Volume95
Issue number26
DOIs
StatePublished - Dec 31 2005

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epitaxy
buffers
gallium nitrides
high energy electrons
polarity
molecular beam epitaxy
electron diffraction
atomic force microscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Yamada-Takamura, Y., Wang, Z. T., Fujikawa, Y., Sakurai, T., Xue, Q. K., Tolle, J., ... Tsong, I. S. T. (2005). Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers. Physical Review Letters, 95(26), [266105]. https://doi.org/10.1103/PhysRevLett.95.266105

Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers. / Yamada-Takamura, Yukiko; Wang, Z. T.; Fujikawa, Y.; Sakurai, T.; Xue, Q. K.; Tolle, J.; Liu, P. L.; Chizmeshya, Andrew; Kouvetakis, John; Tsong, I. S T.

In: Physical Review Letters, Vol. 95, No. 26, 266105, 31.12.2005.

Research output: Contribution to journalArticle

Yamada-Takamura, Y, Wang, ZT, Fujikawa, Y, Sakurai, T, Xue, QK, Tolle, J, Liu, PL, Chizmeshya, A, Kouvetakis, J & Tsong, IST 2005, 'Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers', Physical Review Letters, vol. 95, no. 26, 266105. https://doi.org/10.1103/PhysRevLett.95.266105
Yamada-Takamura Y, Wang ZT, Fujikawa Y, Sakurai T, Xue QK, Tolle J et al. Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers. Physical Review Letters. 2005 Dec 31;95(26). 266105. https://doi.org/10.1103/PhysRevLett.95.266105
Yamada-Takamura, Yukiko ; Wang, Z. T. ; Fujikawa, Y. ; Sakurai, T. ; Xue, Q. K. ; Tolle, J. ; Liu, P. L. ; Chizmeshya, Andrew ; Kouvetakis, John ; Tsong, I. S T. / Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers. In: Physical Review Letters. 2005 ; Vol. 95, No. 26.
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