TY - GEN
T1 - Subthreshold mobility extraction for SOI-MESFETs
AU - Khan, T.
AU - Vasileska, Dragica
AU - Thornton, Trevor
PY - 2004/12/1
Y1 - 2004/12/1
N2 - The extraction of subthreshold mobility in SOI-MESFET or the Schottky junction transistor (SJT) at low bias conditions was discussed. The method used to calculate the mobility is drift based nad the current conduction in the subthreshold region is diffusion dominated. Using the Einstein relation for non-degenarate semiconductors, the corresponding low-field mobility values were found to be in the order of 951 ∼ 1121 cm2/V-sec and also confirmed the mobility calculation in the subthreshold region. The results show that SJT exhibits higher cut-off frequency, and thus suitable for application in r.f. micropower circuit design.
AB - The extraction of subthreshold mobility in SOI-MESFET or the Schottky junction transistor (SJT) at low bias conditions was discussed. The method used to calculate the mobility is drift based nad the current conduction in the subthreshold region is diffusion dominated. Using the Einstein relation for non-degenarate semiconductors, the corresponding low-field mobility values were found to be in the order of 951 ∼ 1121 cm2/V-sec and also confirmed the mobility calculation in the subthreshold region. The results show that SJT exhibits higher cut-off frequency, and thus suitable for application in r.f. micropower circuit design.
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M3 - Conference contribution
AN - SCOPUS:21844474855
SN - 0780386493
T3 - 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
SP - 157
EP - 158
BT - 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
T2 - 2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
Y2 - 24 October 2004 through 27 October 2004
ER -