Subthreshold mobility extraction for SOI-MESFETs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The extraction of subthreshold mobility in SOI-MESFET or the Schottky junction transistor (SJT) at low bias conditions was discussed. The method used to calculate the mobility is drift based nad the current conduction in the subthreshold region is diffusion dominated. Using the Einstein relation for non-degenarate semiconductors, the corresponding low-field mobility values were found to be in the order of 951 ∼ 1121 cm2/V-sec and also confirmed the mobility calculation in the subthreshold region. The results show that SJT exhibits higher cut-off frequency, and thus suitable for application in r.f. micropower circuit design.

Original languageEnglish (US)
Title of host publication2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
Pages157-158
Number of pages2
StatePublished - Dec 1 2004
Event2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts - West Lafayette, IN, United States
Duration: Oct 24 2004Oct 27 2004

Publication series

Name2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Other

Other2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
CountryUnited States
CityWest Lafayette, IN
Period10/24/0410/27/04

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Khan, T., Vasileska, D., & Thornton, T. (2004). Subthreshold mobility extraction for SOI-MESFETs. In 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts (pp. 157-158). (2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts).