Subthreshold electron mobility in SOI MOSFETs and MESFETs

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We present a transport model, based on the solution of the Boltzmann Transport Equation, for modeling n-channel silicon-on-insulator MOSFETs and MESFETs. All relevant scattering mechanisms for the silicon material system are included in the transport portion of the device simulator. We are able to extract from our simulation data set the low-field electron mobility in both the subthreshold and above-threshold regime. The low-field mobility data for the electrons in a silicon-on-insulator (SOI) MOSFET are in agreement with available experimental values. The mobility of the equivalent SOI MESFET device is a factor of three to five times higher than that of the SOI MOSFET in the subthreshold regime.

Original languageEnglish (US)
Pages (from-to)1622-1626
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume52
Issue number7
DOIs
StatePublished - Jul 1 2005

Keywords

  • Low-field mobility
  • Low-power radio frequency applications
  • SOI MESFETs
  • Surface-roughness scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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