Subthreshold electron mobility in SOI MOSFETs and MESFETs

Tarik Khan; Dragica Vasileska; Trevor Thornton

doi:10.1109/TED.2005.850617

Subthreshold electron mobility in SOI MOSFETs and MESFETs

Tarik Khan, Dragica Vasileska, Trevor Thornton

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We present a transport model, based on the solution of the Boltzmann Transport Equation, for modeling n-channel silicon-on-insulator MOSFETs and MESFETs. All relevant scattering mechanisms for the silicon material system are included in the transport portion of the device simulator. We are able to extract from our simulation data set the low-field electron mobility in both the subthreshold and above-threshold regime. The low-field mobility data for the electrons in a silicon-on-insulator (SOI) MOSFET are in agreement with available experimental values. The mobility of the equivalent SOI MESFET device is a factor of three to five times higher than that of the SOI MOSFET in the subthreshold regime.

Original language	English (US)
Pages (from-to)	1622-1626
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	7
DOIs	https://doi.org/10.1109/TED.2005.850617
State	Published - Jul 2005

Keywords

Low-field mobility
Low-power radio frequency applications
SOI MESFETs
Surface-roughness scattering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2005.850617

Cite this

@article{d78bfbbbf0b44f98b4f16ced35a194d5,

title = "Subthreshold electron mobility in SOI MOSFETs and MESFETs",

abstract = "We present a transport model, based on the solution of the Boltzmann Transport Equation, for modeling n-channel silicon-on-insulator MOSFETs and MESFETs. All relevant scattering mechanisms for the silicon material system are included in the transport portion of the device simulator. We are able to extract from our simulation data set the low-field electron mobility in both the subthreshold and above-threshold regime. The low-field mobility data for the electrons in a silicon-on-insulator (SOI) MOSFET are in agreement with available experimental values. The mobility of the equivalent SOI MESFET device is a factor of three to five times higher than that of the SOI MOSFET in the subthreshold regime.",

keywords = "Low-field mobility, Low-power radio frequency applications, SOI MESFETs, Surface-roughness scattering",

author = "Tarik Khan and Dragica Vasileska and Trevor Thornton",

note = "Funding Information: Manuscript received December 9, 2004; revised April 8, 2005. This work was supported by the Office of Naval Research under Contract N00014-02-1-0783 and by the National Science Foundation under Contract ECS-0214867. The review of this paper was arranged by Editor J. N. Burghartz.",

year = "2005",

month = jul,

doi = "10.1109/TED.2005.850617",

language = "English (US)",

volume = "52",

pages = "1622--1626",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Subthreshold electron mobility in SOI MOSFETs and MESFETs

AU - Khan, Tarik

AU - Vasileska, Dragica

AU - Thornton, Trevor

N1 - Funding Information: Manuscript received December 9, 2004; revised April 8, 2005. This work was supported by the Office of Naval Research under Contract N00014-02-1-0783 and by the National Science Foundation under Contract ECS-0214867. The review of this paper was arranged by Editor J. N. Burghartz.

PY - 2005/7

Y1 - 2005/7

N2 - We present a transport model, based on the solution of the Boltzmann Transport Equation, for modeling n-channel silicon-on-insulator MOSFETs and MESFETs. All relevant scattering mechanisms for the silicon material system are included in the transport portion of the device simulator. We are able to extract from our simulation data set the low-field electron mobility in both the subthreshold and above-threshold regime. The low-field mobility data for the electrons in a silicon-on-insulator (SOI) MOSFET are in agreement with available experimental values. The mobility of the equivalent SOI MESFET device is a factor of three to five times higher than that of the SOI MOSFET in the subthreshold regime.

AB - We present a transport model, based on the solution of the Boltzmann Transport Equation, for modeling n-channel silicon-on-insulator MOSFETs and MESFETs. All relevant scattering mechanisms for the silicon material system are included in the transport portion of the device simulator. We are able to extract from our simulation data set the low-field electron mobility in both the subthreshold and above-threshold regime. The low-field mobility data for the electrons in a silicon-on-insulator (SOI) MOSFET are in agreement with available experimental values. The mobility of the equivalent SOI MESFET device is a factor of three to five times higher than that of the SOI MOSFET in the subthreshold regime.

KW - Low-field mobility

KW - Low-power radio frequency applications

KW - SOI MESFETs

KW - Surface-roughness scattering

UR - http://www.scopus.com/inward/record.url?scp=23944527171&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23944527171&partnerID=8YFLogxK

U2 - 10.1109/TED.2005.850617

DO - 10.1109/TED.2005.850617

M3 - Article

AN - SCOPUS:23944527171

SN - 0018-9383

VL - 52

SP - 1622

EP - 1626

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -

Subthreshold electron mobility in SOI MOSFETs and MESFETs

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this