Subpicosecond time-resolved Raman studies of LO phonons in GaN

Kong-Thon Tsen, Juliann G. Kiang, D. K. Ferry, H. Morkoç

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN at T = 300K for photoexcited electron-hole pair density ranging from 1016cm-3 to 2×019c/w-3. The lifetime has been found to decrease from 2.5 ps, at the lowest density to 0.35 ps, at the highest density. Our experimental findings should help resolve the recent controversy over the lifetime of LO phonon mode in GaN.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices II
DOIs
StatePublished - May 24 2007
EventGallium Nitride Materials and Devices II - San Jose, CA, United States
Duration: Jan 22 2007Jan 25 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6473
ISSN (Print)0277-786X

Other

OtherGallium Nitride Materials and Devices II
CountryUnited States
CitySan Jose, CA
Period1/22/071/25/07

Keywords

  • Gan
  • LO phonons
  • Lifetime
  • Raman scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Tsen, K-T., Kiang, J. G., Ferry, D. K., & Morkoç, H. (2007). Subpicosecond time-resolved Raman studies of LO phonons in GaN. In Gallium Nitride Materials and Devices II [64730Q] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6473). https://doi.org/10.1117/12.703681