Subpicosecond time-resolved Raman studies of field-induced transient transport in an InxGa1-xAs -based p-i-n semiconductor nanostructure

Kong-Thon Tsen, Juliann G. Kiang, D. K. Ferry, H. Morko̧

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Electron transient transport in an Inx Ga1-x As -based (x=0.53) p-i-n nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy on a subpicosecond time scale and at T=300 K. The experimental results reveal the time evolution of the electron distribution function and electron drift velocity with subpicosecond time resolution. These experimental results are compared with those of both InP-based and GaAs-based p-i-n nanostructures and provide a consistent understanding and better insight of electron transient transport phenomena in semiconductors.

Original languageEnglish (US)
Article number262101
JournalApplied Physics Letters
Issue number26
StatePublished - Dec 1 2006


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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