Subpicosecond time-resolved Raman studies of electron-longitudinal optical phonon interactions in InN

Kong-Thon Tsen, Juliann G. Kiang, D. K. Ferry, Hai Lu, William J. Schaff, Hon Way Lin, Shangjr Gwo

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Abstract

Electron-longitudinal optical phonon scattering rate in InN has been directly measured by subpicosecond time-resolved Raman spectroscopy. The experimental results show that for a thick layer of InN grown on GaN, the average total electron-longitudinal optical phonon scattering rate is (5.1±1.0) × 1013 s-1. This enormous electron-longitudinal optical phonon scattering rate, which is comparable to that observed in GaN, has been attributed to the extremely polar nature of InN.

Original languageEnglish (US)
Article number172108
JournalApplied Physics Letters
Volume90
Issue number17
DOIs
StatePublished - May 21 2007

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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