Electron-longitudinal optical phonon scattering rate in InN has been directly measured by subpicosecond time-resolved Raman spectroscopy. The experimental results show that for a thick layer of InN grown on GaN, the average total electron-longitudinal optical phonon scattering rate is (5.1±1.0) × 1013 s-1. This enormous electron-longitudinal optical phonon scattering rate, which is comparable to that observed in GaN, has been attributed to the extremely polar nature of InN.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)