Sublimation growth and characterization of bulk aluminum nitride single crystals

Cengiz M. Balkaş, Zlatko Sitar, Tsvetanka Zheleva, L. Bergman, R. Nemanich, R. F. Davis

Research output: Contribution to journalArticlepeer-review

86 Scopus citations

Abstract

Single crystalline platelets of aluminum nitride (AlN) ≤ 1 mm thick have been grown within the temperature range of 1950-2250°C on 10 × 10 mm2 α(6H)-silicon carbide (SiC) substrates via sublimation-recondensation in a resistively heated graphite furnace. The source material was sintered AlN. A maximum growth rate of 500 μm/h was achieved at 2150°C and a source-to-seed separation of 4 mm. Growth rates below 2000°C were approximately one order of magnitude lower. Crystals grown at high temperatures ranged in color from blue to green due to the incorporation of Si and C from the SiC substrates; those grown at lower temperatures were colorless and transparent. Secondary-ion mass spectroscopy (SIMS) results showed almost a two order of magnitude decrease in the concentrations of these two impurities in the transparent crystals. Plan view transmission electron microscopy (TEM) of these crystals showed no line or planar defects. Raman spectroscopy and X-ray diffraction (XRD) studies indicated a strain free material.

Original languageEnglish (US)
Pages (from-to)363-370
Number of pages8
JournalJournal of Crystal Growth
Volume179
Issue number3-4
DOIs
StatePublished - Aug 1997
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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