Sublimation growth and characterization of bulk aluminum nitride single crystals

Cengiz M. Balkaş; Zlatko Sitar; Tsvetanka Zheleva; L. Bergman; R. Nemanich; R. F. Davis

doi:10.1016/S0022-0248(97)00160-7

Sublimation growth and characterization of bulk aluminum nitride single crystals

Cengiz M. Balkaş, Zlatko Sitar, Tsvetanka Zheleva, L. Bergman, R. Nemanich, R. F. Davis

Research output: Contribution to journal › Article › peer-review

92 Scopus citations

Abstract

Single crystalline platelets of aluminum nitride (AlN) ≤ 1 mm thick have been grown within the temperature range of 1950-2250°C on 10 × 10 mm² α(6H)-silicon carbide (SiC) substrates via sublimation-recondensation in a resistively heated graphite furnace. The source material was sintered AlN. A maximum growth rate of 500 μm/h was achieved at 2150°C and a source-to-seed separation of 4 mm. Growth rates below 2000°C were approximately one order of magnitude lower. Crystals grown at high temperatures ranged in color from blue to green due to the incorporation of Si and C from the SiC substrates; those grown at lower temperatures were colorless and transparent. Secondary-ion mass spectroscopy (SIMS) results showed almost a two order of magnitude decrease in the concentrations of these two impurities in the transparent crystals. Plan view transmission electron microscopy (TEM) of these crystals showed no line or planar defects. Raman spectroscopy and X-ray diffraction (XRD) studies indicated a strain free material.

Original language	English (US)
Pages (from-to)	363-370
Number of pages	8
Journal	Journal of Crystal Growth
Volume	179
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(97)00160-7
State	Published - Aug 1997
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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@article{db93e03d444b482792cafa7d95c09e63,

title = "Sublimation growth and characterization of bulk aluminum nitride single crystals",

abstract = "Single crystalline platelets of aluminum nitride (AlN) ≤ 1 mm thick have been grown within the temperature range of 1950-2250°C on 10 × 10 mm2 α(6H)-silicon carbide (SiC) substrates via sublimation-recondensation in a resistively heated graphite furnace. The source material was sintered AlN. A maximum growth rate of 500 μm/h was achieved at 2150°C and a source-to-seed separation of 4 mm. Growth rates below 2000°C were approximately one order of magnitude lower. Crystals grown at high temperatures ranged in color from blue to green due to the incorporation of Si and C from the SiC substrates; those grown at lower temperatures were colorless and transparent. Secondary-ion mass spectroscopy (SIMS) results showed almost a two order of magnitude decrease in the concentrations of these two impurities in the transparent crystals. Plan view transmission electron microscopy (TEM) of these crystals showed no line or planar defects. Raman spectroscopy and X-ray diffraction (XRD) studies indicated a strain free material.",

author = "Balka{\c s}, {Cengiz M.} and Zlatko Sitar and Tsvetanka Zheleva and L. Bergman and R. Nemanich and Davis, {R. F.}",

note = "Funding Information: The authors acknowledgeth e support of the Office of Naval Research under the contract N00014-92-J-1477,M r. M Rafaniello and the Dow ChemicaCl ompanyf or providingh ot-pressed A1N, and Mr. M. McClure and M. Bremser of NCSU for assistancein XPS and AFM studies, respectively.",

year = "1997",

month = aug,

doi = "10.1016/S0022-0248(97)00160-7",

language = "English (US)",

volume = "179",

pages = "363--370",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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T1 - Sublimation growth and characterization of bulk aluminum nitride single crystals

AU - Balkaş, Cengiz M.

AU - Sitar, Zlatko

AU - Zheleva, Tsvetanka

AU - Bergman, L.

AU - Nemanich, R.

AU - Davis, R. F.

N1 - Funding Information: The authors acknowledgeth e support of the Office of Naval Research under the contract N00014-92-J-1477,M r. M Rafaniello and the Dow ChemicaCl ompanyf or providingh ot-pressed A1N, and Mr. M. McClure and M. Bremser of NCSU for assistancein XPS and AFM studies, respectively.

PY - 1997/8

Y1 - 1997/8

N2 - Single crystalline platelets of aluminum nitride (AlN) ≤ 1 mm thick have been grown within the temperature range of 1950-2250°C on 10 × 10 mm2 α(6H)-silicon carbide (SiC) substrates via sublimation-recondensation in a resistively heated graphite furnace. The source material was sintered AlN. A maximum growth rate of 500 μm/h was achieved at 2150°C and a source-to-seed separation of 4 mm. Growth rates below 2000°C were approximately one order of magnitude lower. Crystals grown at high temperatures ranged in color from blue to green due to the incorporation of Si and C from the SiC substrates; those grown at lower temperatures were colorless and transparent. Secondary-ion mass spectroscopy (SIMS) results showed almost a two order of magnitude decrease in the concentrations of these two impurities in the transparent crystals. Plan view transmission electron microscopy (TEM) of these crystals showed no line or planar defects. Raman spectroscopy and X-ray diffraction (XRD) studies indicated a strain free material.

AB - Single crystalline platelets of aluminum nitride (AlN) ≤ 1 mm thick have been grown within the temperature range of 1950-2250°C on 10 × 10 mm2 α(6H)-silicon carbide (SiC) substrates via sublimation-recondensation in a resistively heated graphite furnace. The source material was sintered AlN. A maximum growth rate of 500 μm/h was achieved at 2150°C and a source-to-seed separation of 4 mm. Growth rates below 2000°C were approximately one order of magnitude lower. Crystals grown at high temperatures ranged in color from blue to green due to the incorporation of Si and C from the SiC substrates; those grown at lower temperatures were colorless and transparent. Secondary-ion mass spectroscopy (SIMS) results showed almost a two order of magnitude decrease in the concentrations of these two impurities in the transparent crystals. Plan view transmission electron microscopy (TEM) of these crystals showed no line or planar defects. Raman spectroscopy and X-ray diffraction (XRD) studies indicated a strain free material.

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Sublimation growth and characterization of bulk aluminum nitride single crystals

Abstract

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