Subband anticrossing and the spin Hall effect in quantum wires

A. W. Cummings, R. Akis, D. K. Ferry

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report on numerical simulations of the intrinsic spin Hall effect in semiconductor quantum wires as a function of the Rashba spin-orbit coupling strength, the electron density, and the width of the wire. We find that the strength of the spin Hall effect does not depend monotonically on these parameters, but instead exhibits a local maximum. This behavior is explained by considering the dispersion relation of the electrons in the wire, which is characterized by the anticrossing of adjacent subbands. These results lead to a simple estimate of the optimal wire width for spin Hall transport experiments, and simulations indicate that this optimal width is independent of disorder. The anticrossing of adjacent subbands is related to a quantum phase transition in momentum space, and is accompanied by an enhancement of the Berry curvature and subsequently in the magnitude of the spin Hall effect.

Original languageEnglish (US)
Article number055502
JournalJournal of Physics Condensed Matter
Volume21
Issue number5
DOIs
StatePublished - 2009

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Spin Hall effect
Semiconductor quantum wires
quantum wires
Hall effect
Wire
wire
Carrier concentration
Momentum
Orbits
Phase transitions
Electrons
Computer simulation
simulation
curvature
disorders
orbits
momentum
Experiments
augmentation
estimates

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Subband anticrossing and the spin Hall effect in quantum wires. / Cummings, A. W.; Akis, R.; Ferry, D. K.

In: Journal of Physics Condensed Matter, Vol. 21, No. 5, 055502, 2009.

Research output: Contribution to journalArticle

Cummings, A. W. ; Akis, R. ; Ferry, D. K. / Subband anticrossing and the spin Hall effect in quantum wires. In: Journal of Physics Condensed Matter. 2009 ; Vol. 21, No. 5.
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