Abstract

A variable wavelength nanosecond pulsed laser is used to create and characterize the subsurface damage in Sapphire and Silicon. The high intensity laser light of wavelengths that are transparent to crystalline Sapphire and silicon is used. The depth and size of the damage spots are compared with a ray-optics model and electron plasma breakdown model. The effect of focusing optics, number of shots, numerical aperture (NA) of the focusing optic on the experimentally measured subsurface damage spot size is presented. A range of spot sizes were formed from 100-300 μm in the bulk of sapphire without damaging the surface. Preferential chemical etchants and or cleaving methods will be implemented to peel thin wafers from the thicker ones. These results and the understanding in the fields of bulk material modification and internal laser micromachining of semiconductors will be implemented towards the laser wafering.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages628-630
Number of pages3
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Fingerprint

Laser damage
Sapphire
Optics
Silicon
Lasers
Wavelength
Micromachining
Pulsed lasers
Semiconductor materials
Crystalline materials
Plasmas
Electrons

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Dahal, S. N., Lebeau, J. A., Bowden, S., & Honsberg, C. (2016). Sub-surface laser damage in sapphire and silicon: A path towards laser wafering. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 628-630). [7749674] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749674

Sub-surface laser damage in sapphire and silicon : A path towards laser wafering. / Dahal, Som Nath; Lebeau, James A.; Bowden, Stuart; Honsberg, Christiana.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 628-630 7749674.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dahal, SN, Lebeau, JA, Bowden, S & Honsberg, C 2016, Sub-surface laser damage in sapphire and silicon: A path towards laser wafering. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749674, Institute of Electrical and Electronics Engineers Inc., pp. 628-630, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749674
Dahal SN, Lebeau JA, Bowden S, Honsberg C. Sub-surface laser damage in sapphire and silicon: A path towards laser wafering. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 628-630. 7749674 https://doi.org/10.1109/PVSC.2016.7749674
Dahal, Som Nath ; Lebeau, James A. ; Bowden, Stuart ; Honsberg, Christiana. / Sub-surface laser damage in sapphire and silicon : A path towards laser wafering. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. pp. 628-630
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