Sub-surface laser damage in sapphire and silicon: A path towards laser wafering

Som Nath Dahal; James A. Lebeau; Stuart Bowden; Christiana Honsberg

doi:10.1109/PVSC.2016.7749674

Sub-surface laser damage in sapphire and silicon: A path towards laser wafering

Som Nath Dahal, James A. Lebeau, Stuart Bowden, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A variable wavelength nanosecond pulsed laser is used to create and characterize the subsurface damage in Sapphire and Silicon. The high intensity laser light of wavelengths that are transparent to crystalline Sapphire and silicon is used. The depth and size of the damage spots are compared with a ray-optics model and electron plasma breakdown model. The effect of focusing optics, number of shots, numerical aperture (NA) of the focusing optic on the experimentally measured subsurface damage spot size is presented. A range of spot sizes were formed from 100-300 μm in the bulk of sapphire without damaging the surface. Preferential chemical etchants and or cleaving methods will be implemented to peel thin wafers from the thicker ones. These results and the understanding in the fields of bulk material modification and internal laser micromachining of semiconductors will be implemented towards the laser wafering.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	628-630
Number of pages	3
Volume	2016-November
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749674
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2016.7749674

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Sub-surface laser damage in sapphire and silicon: A path towards laser wafering. / Dahal, Som Nath; Lebeau, James A.; Bowden, Stuart et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 628-630 7749674.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Dahal, SN, Lebeau, JA, Bowden, S & Honsberg, C 2016, Sub-surface laser damage in sapphire and silicon: A path towards laser wafering. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749674, Institute of Electrical and Electronics Engineers Inc., pp. 628-630, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749674

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AB - A variable wavelength nanosecond pulsed laser is used to create and characterize the subsurface damage in Sapphire and Silicon. The high intensity laser light of wavelengths that are transparent to crystalline Sapphire and silicon is used. The depth and size of the damage spots are compared with a ray-optics model and electron plasma breakdown model. The effect of focusing optics, number of shots, numerical aperture (NA) of the focusing optic on the experimentally measured subsurface damage spot size is presented. A range of spot sizes were formed from 100-300 μm in the bulk of sapphire without damaging the surface. Preferential chemical etchants and or cleaving methods will be implemented to peel thin wafers from the thicker ones. These results and the understanding in the fields of bulk material modification and internal laser micromachining of semiconductors will be implemented towards the laser wafering.

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Sub-surface laser damage in sapphire and silicon: A path towards laser wafering

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