TY - GEN
T1 - Sub-surface laser damage in sapphire and silicon
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
AU - Dahal, Som Nath
AU - Lebeau, James A.
AU - Bowden, Stuart
AU - Honsberg, Christiana
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/18
Y1 - 2016/11/18
N2 - A variable wavelength nanosecond pulsed laser is used to create and characterize the subsurface damage in Sapphire and Silicon. The high intensity laser light of wavelengths that are transparent to crystalline Sapphire and silicon is used. The depth and size of the damage spots are compared with a ray-optics model and electron plasma breakdown model. The effect of focusing optics, number of shots, numerical aperture (NA) of the focusing optic on the experimentally measured subsurface damage spot size is presented. A range of spot sizes were formed from 100-300 μm in the bulk of sapphire without damaging the surface. Preferential chemical etchants and or cleaving methods will be implemented to peel thin wafers from the thicker ones. These results and the understanding in the fields of bulk material modification and internal laser micromachining of semiconductors will be implemented towards the laser wafering.
AB - A variable wavelength nanosecond pulsed laser is used to create and characterize the subsurface damage in Sapphire and Silicon. The high intensity laser light of wavelengths that are transparent to crystalline Sapphire and silicon is used. The depth and size of the damage spots are compared with a ray-optics model and electron plasma breakdown model. The effect of focusing optics, number of shots, numerical aperture (NA) of the focusing optic on the experimentally measured subsurface damage spot size is presented. A range of spot sizes were formed from 100-300 μm in the bulk of sapphire without damaging the surface. Preferential chemical etchants and or cleaving methods will be implemented to peel thin wafers from the thicker ones. These results and the understanding in the fields of bulk material modification and internal laser micromachining of semiconductors will be implemented towards the laser wafering.
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U2 - 10.1109/PVSC.2016.7749674
DO - 10.1109/PVSC.2016.7749674
M3 - Conference contribution
AN - SCOPUS:85003545031
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 628
EP - 630
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 5 June 2016 through 10 June 2016
ER -