Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors

Theeradetch Detchprohm, Yuh Shiuan Liu, Karan Mehta, Shuo Wang, Hongen Xie, Tsung Ting Kao, Shyh Chiang Shen, Paul D. Yoder, Fernando Ponce, Russell D. Dupuis

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

Deep-UV distributed Bragg reflectors (DBRs) operating at λ = 220-250 nm with reflectivity close to unity were produced using epitaxial AlxGa1-xN/AlN superlattice structures grown on AlN/sapphire templates via metalorganic chemical vapor deposition. Owing to the near-bandedge excitonic resonance in the AlxGa1-xN layers, the AlN mole fractions, x, were regulated to keep the reflective plateau within the enhanced refractive index contrast region between AlGaN and AlN of approximately 7%-11%. For DBRs incorporating high-index layers of AlGaN grown via a flow-rate modulated epitaxy technique, a reflectivity of 97% was achieved with a total pair number of 30.5 which was much smaller than number of pairs needed for the DBRs with conventionally grown AlGaN layers. The stopbands of these DBRs were about 6-9 nm.

Original languageEnglish (US)
Article number011105
JournalApplied Physics Letters
Volume110
Issue number1
DOIs
Publication statusPublished - Jan 4 2017

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Detchprohm, T., Liu, Y. S., Mehta, K., Wang, S., Xie, H., Kao, T. T., ... Dupuis, R. D. (2017). Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors. Applied Physics Letters, 110(1), [011105]. https://doi.org/10.1063/1.4973581