Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors

Theeradetch Detchprohm; Yuh Shiuan Liu; Karan Mehta; Shuo Wang; Hongen Xie; Tsung Ting Kao; Shyh Chiang Shen; Paul D. Yoder; Fernando Ponce; Russell D. Dupuis

doi:10.1063/1.4973581

Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors

Theeradetch Detchprohm, Yuh Shiuan Liu, Karan Mehta, Shuo Wang, Hongen Xie, Tsung Ting Kao, Shyh Chiang Shen, Paul D. Yoder, Fernando Ponce, Russell D. Dupuis

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Deep-UV distributed Bragg reflectors (DBRs) operating at λ = 220-250 nm with reflectivity close to unity were produced using epitaxial Al_xGa_1-xN/AlN superlattice structures grown on AlN/sapphire templates via metalorganic chemical vapor deposition. Owing to the near-bandedge excitonic resonance in the Al_xGa_1-xN layers, the AlN mole fractions, x, were regulated to keep the reflective plateau within the enhanced refractive index contrast region between AlGaN and AlN of approximately 7%-11%. For DBRs incorporating high-index layers of AlGaN grown via a flow-rate modulated epitaxy technique, a reflectivity of 97% was achieved with a total pair number of 30.5 which was much smaller than number of pairs needed for the DBRs with conventionally grown AlGaN layers. The stopbands of these DBRs were about 6-9 nm.

Original language	English (US)
Article number	011105
Journal	Applied Physics Letters
Volume	110
Issue number	1
DOIs	https://doi.org/10.1063/1.4973581
State	Published - Jan 4 2017

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4973581

Cite this

@article{f9d6639bd05a49c1918a7c1cf1cbe788,

title = "Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors",

abstract = "Deep-UV distributed Bragg reflectors (DBRs) operating at λ = 220-250 nm with reflectivity close to unity were produced using epitaxial AlxGa1-xN/AlN superlattice structures grown on AlN/sapphire templates via metalorganic chemical vapor deposition. Owing to the near-bandedge excitonic resonance in the AlxGa1-xN layers, the AlN mole fractions, x, were regulated to keep the reflective plateau within the enhanced refractive index contrast region between AlGaN and AlN of approximately 7%-11%. For DBRs incorporating high-index layers of AlGaN grown via a flow-rate modulated epitaxy technique, a reflectivity of 97% was achieved with a total pair number of 30.5 which was much smaller than number of pairs needed for the DBRs with conventionally grown AlGaN layers. The stopbands of these DBRs were about 6-9 nm.",

author = "Theeradetch Detchprohm and Liu, {Yuh Shiuan} and Karan Mehta and Shuo Wang and Hongen Xie and Kao, {Tsung Ting} and Shen, {Shyh Chiang} and Yoder, {Paul D.} and Fernando Ponce and Dupuis, {Russell D.}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = jan,

day = "4",

doi = "10.1063/1.4973581",

language = "English (US)",

volume = "110",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors

AU - Detchprohm, Theeradetch

AU - Liu, Yuh Shiuan

AU - Mehta, Karan

AU - Wang, Shuo

AU - Xie, Hongen

AU - Kao, Tsung Ting

AU - Shen, Shyh Chiang

AU - Yoder, Paul D.

AU - Ponce, Fernando

AU - Dupuis, Russell D.

PY - 2017/1/4

Y1 - 2017/1/4

N2 - Deep-UV distributed Bragg reflectors (DBRs) operating at λ = 220-250 nm with reflectivity close to unity were produced using epitaxial AlxGa1-xN/AlN superlattice structures grown on AlN/sapphire templates via metalorganic chemical vapor deposition. Owing to the near-bandedge excitonic resonance in the AlxGa1-xN layers, the AlN mole fractions, x, were regulated to keep the reflective plateau within the enhanced refractive index contrast region between AlGaN and AlN of approximately 7%-11%. For DBRs incorporating high-index layers of AlGaN grown via a flow-rate modulated epitaxy technique, a reflectivity of 97% was achieved with a total pair number of 30.5 which was much smaller than number of pairs needed for the DBRs with conventionally grown AlGaN layers. The stopbands of these DBRs were about 6-9 nm.

AB - Deep-UV distributed Bragg reflectors (DBRs) operating at λ = 220-250 nm with reflectivity close to unity were produced using epitaxial AlxGa1-xN/AlN superlattice structures grown on AlN/sapphire templates via metalorganic chemical vapor deposition. Owing to the near-bandedge excitonic resonance in the AlxGa1-xN layers, the AlN mole fractions, x, were regulated to keep the reflective plateau within the enhanced refractive index contrast region between AlGaN and AlN of approximately 7%-11%. For DBRs incorporating high-index layers of AlGaN grown via a flow-rate modulated epitaxy technique, a reflectivity of 97% was achieved with a total pair number of 30.5 which was much smaller than number of pairs needed for the DBRs with conventionally grown AlGaN layers. The stopbands of these DBRs were about 6-9 nm.

UR - http://www.scopus.com/inward/record.url?scp=85008712533&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85008712533&partnerID=8YFLogxK

U2 - 10.1063/1.4973581

DO - 10.1063/1.4973581

M3 - Article

AN - SCOPUS:85008712533

SN - 0003-6951

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 011105

ER -

Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this