Studies of carrier dynamics in In xGa 1-xAs 1-yN y by picosecond Raman spectroscopy

Y. Chen, Kong-Thon Tsen, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Non-equilibrium electron distributions and energy loss rate in a metal-organic chemical vapor deposition-grown In xGa 1-xAs 1-yN y (x = 0.03 and y = 0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n ≅ 10 18 cm -3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in In xGa 1-xAs 1-yN y is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.T. Tsen, J.-J. Song
Pages231-239
Number of pages9
Volume4643
DOIs
StatePublished - 2002
EventUltrafast Phenomena in Semiconductors VI - San Jose, CA, United States
Duration: Jan 21 2002Jan 25 2002

Other

OtherUltrafast Phenomena in Semiconductors VI
CountryUnited States
CitySan Jose, CA
Period1/21/021/25/02

Keywords

  • In Ga As N
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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