Studies of carrier dynamics in In
            xGa
            1-xAs
            1-yN
            y by picosecond Raman spectroscopy

Y. Chen; Kong-Thon Tsen; D. K. Ferry

doi:10.1117/12.470427

Studies of carrier dynamics in In _xGa _1-xAs _1-yN _y by picosecond Raman spectroscopy

Y. Chen, Kong-Thon Tsen, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Non-equilibrium electron distributions and energy loss rate in a metal-organic chemical vapor deposition-grown In _xGa _1-xAs _1-yN _y (x = 0.03 and y = 0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n ≅ 10 ¹⁸ cm ^-3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in In _xGa _1-xAs _1-yN _y is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	K.T. Tsen, J.-J. Song
Pages	231-239
Number of pages	9
Volume	4643
DOIs	https://doi.org/10.1117/12.470427
State	Published - 2002
Event	Ultrafast Phenomena in Semiconductors VI - San Jose, CA, United States Duration: Jan 21 2002 → Jan 25 2002

Other

Other	Ultrafast Phenomena in Semiconductors VI
Country/Territory	United States
City	San Jose, CA
Period	1/21/02 → 1/25/02

Keywords

In Ga As N
Raman spectroscopy

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Access to Document

10.1117/12.470427

Cite this

Studies of carrier dynamics in In _xGa _1-xAs _1-yN _y by picosecond Raman spectroscopy . / Chen, Y.; Tsen, Kong-Thon; Ferry, D. K.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / K.T. Tsen; J.-J. Song. Vol. 4643 2002. p. 231-239.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, Y, Tsen, K-T & Ferry, DK 2002, Studies of carrier dynamics in In _xGa _1-xAs _1-yN _y by picosecond Raman spectroscopy in KT Tsen & J-J Song (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4643, pp. 231-239, Ultrafast Phenomena in Semiconductors VI, San Jose, CA, United States, 1/21/02. https://doi.org/10.1117/12.470427

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abstract = "Non-equilibrium electron distributions and energy loss rate in a metal-organic chemical vapor deposition-grown In xGa 1-xAs 1-yN y (x = 0.03 and y = 0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n ≅ 10 18 cm -3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in In xGa 1-xAs 1-yN y is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs. ",

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N2 - Non-equilibrium electron distributions and energy loss rate in a metal-organic chemical vapor deposition-grown In xGa 1-xAs 1-yN y (x = 0.03 and y = 0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n ≅ 10 18 cm -3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in In xGa 1-xAs 1-yN y is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

AB - Non-equilibrium electron distributions and energy loss rate in a metal-organic chemical vapor deposition-grown In xGa 1-xAs 1-yN y (x = 0.03 and y = 0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n ≅ 10 18 cm -3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in In xGa 1-xAs 1-yN y is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

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