Structure and defects in the amorphous Si:As:H system

R. J. Nemanich, J. C. Knights

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Raman and ESR measurements were used to study the atomic bonding and defect concentrations. Features are identified in the Raman spectra which can be attributed to configurations containing SiSi, SiAs and AsAs bonds. Features due to all three of these configurations were found to simultaneously exist, thus excluding a chemically ordered model of the bonding. However, the composition dependences of the features do not follow exactly a random bonding model either. The H bonding configurations were reflected in features at ∼2000 cm-1 in the Raman spectra. It was found that the H bonding changed dramatically in the As doping to 5% As alloying region. The ESR measurements indicated a low level of singly occupied defect states in all the samples studied.

Original languageEnglish (US)
Pages (from-to)243-248
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume35-36
Issue numberPART 1
DOIs
StatePublished - Jan 1 1980
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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