Structure and defect development during implantation of SIMOX material

S. Visitserngtrakul, C. O. Jung, Stephen Krause, B. F. Cordts

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Structural development and defect formation during oxygen implantation of silicon-on-insulator material was studied by conventional and high resolution electron microscopy. The effects of implantation parameters: wafer temperature, dose, and current density were investigated. Wafer temperture had the largest effect on the type and character of the defects. In the top silicon layer of samples implanted at 350°C, microtwins and short stacking faults were present. From 450-550°C, stacking faults grew in length but microtwinning was reduced. From 550-700°C, a new type of defect, a multiply faulted defect (MFD), was observed and trails of oxygen bubbles formed at the surface. In the substrate beneath the buried oxide layer, stacking faults and {113} defects were present at all temperatures. The defect density in an annealed material is significantly reduced for samples implanted at ≥ 600°C. Correlation between the defect structure in as-implanted and annealed material will be discussed.

Original languageEnglish (US)
Title of host publicationProceedings - The Electrochemical Society
EditorsDennis N. Schmidt, K. Izumi, Peter L.F. Hemment, Glenn W. Cullen
PublisherPubl by Electrochemical Soc Inc
Pages106-119
Number of pages14
Volume90
Edition6
StatePublished - Jan 1990
EventProceedings of the Fourth International Symposium on Silicon-on-Insulator Technology and Devices - Montreal, Que, Can
Duration: May 8 1990May 11 1990

Other

OtherProceedings of the Fourth International Symposium on Silicon-on-Insulator Technology and Devices
CityMontreal, Que, Can
Period5/8/905/11/90

Fingerprint

Stacking faults
Defects
Silicon
Oxygen
Defect structures
Defect density
High resolution electron microscopy
Current density
Temperature
Oxides
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Visitserngtrakul, S., Jung, C. O., Krause, S., & Cordts, B. F. (1990). Structure and defect development during implantation of SIMOX material. In D. N. Schmidt, K. Izumi, P. L. F. Hemment, & G. W. Cullen (Eds.), Proceedings - The Electrochemical Society (6 ed., Vol. 90, pp. 106-119). Publ by Electrochemical Soc Inc.

Structure and defect development during implantation of SIMOX material. / Visitserngtrakul, S.; Jung, C. O.; Krause, Stephen; Cordts, B. F.

Proceedings - The Electrochemical Society. ed. / Dennis N. Schmidt; K. Izumi; Peter L.F. Hemment; Glenn W. Cullen. Vol. 90 6. ed. Publ by Electrochemical Soc Inc, 1990. p. 106-119.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Visitserngtrakul, S, Jung, CO, Krause, S & Cordts, BF 1990, Structure and defect development during implantation of SIMOX material. in DN Schmidt, K Izumi, PLF Hemment & GW Cullen (eds), Proceedings - The Electrochemical Society. 6 edn, vol. 90, Publ by Electrochemical Soc Inc, pp. 106-119, Proceedings of the Fourth International Symposium on Silicon-on-Insulator Technology and Devices, Montreal, Que, Can, 5/8/90.
Visitserngtrakul S, Jung CO, Krause S, Cordts BF. Structure and defect development during implantation of SIMOX material. In Schmidt DN, Izumi K, Hemment PLF, Cullen GW, editors, Proceedings - The Electrochemical Society. 6 ed. Vol. 90. Publ by Electrochemical Soc Inc. 1990. p. 106-119
Visitserngtrakul, S. ; Jung, C. O. ; Krause, Stephen ; Cordts, B. F. / Structure and defect development during implantation of SIMOX material. Proceedings - The Electrochemical Society. editor / Dennis N. Schmidt ; K. Izumi ; Peter L.F. Hemment ; Glenn W. Cullen. Vol. 90 6. ed. Publ by Electrochemical Soc Inc, 1990. pp. 106-119
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