Structure and defect development during implantation of SIMOX material

S. Visitserngtrakul, C. O. Jung, Stephen Krause, B. F. Cordts

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Structural development and defect formation during oxygen implantation of silicon-on-insulator material was studied by conventional and high resolution electron microscopy. The effects of implantation parameters: wafer temperature, dose, and current density were investigated. Wafer temperture had the largest effect on the type and character of the defects. In the top silicon layer of samples implanted at 350°C, microtwins and short stacking faults were present. From 450-550°C, stacking faults grew in length but microtwinning was reduced. From 550-700°C, a new type of defect, a multiply faulted defect (MFD), was observed and trails of oxygen bubbles formed at the surface. In the substrate beneath the buried oxide layer, stacking faults and {113} defects were present at all temperatures. The defect density in an annealed material is significantly reduced for samples implanted at ≥ 600°C. Correlation between the defect structure in as-implanted and annealed material will be discussed.

Original languageEnglish (US)
Title of host publicationProceedings - The Electrochemical Society
EditorsDennis N. Schmidt, K. Izumi, Peter L.F. Hemment, Glenn W. Cullen
PublisherPubl by Electrochemical Soc Inc
Pages106-119
Number of pages14
Volume90
Edition6
StatePublished - Jan 1990
EventProceedings of the Fourth International Symposium on Silicon-on-Insulator Technology and Devices - Montreal, Que, Can
Duration: May 8 1990May 11 1990

Other

OtherProceedings of the Fourth International Symposium on Silicon-on-Insulator Technology and Devices
CityMontreal, Que, Can
Period5/8/905/11/90

ASJC Scopus subject areas

  • Engineering(all)

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    Visitserngtrakul, S., Jung, C. O., Krause, S., & Cordts, B. F. (1990). Structure and defect development during implantation of SIMOX material. In D. N. Schmidt, K. Izumi, P. L. F. Hemment, & G. W. Cullen (Eds.), Proceedings - The Electrochemical Society (6 ed., Vol. 90, pp. 106-119). Publ by Electrochemical Soc Inc.