Structure and defect development during implantation of SIMOX material

S. Visitserngtrakul; C. O. Jung; Stephen Krause; B. F. Cordts

Structure and defect development during implantation of SIMOX material

S. Visitserngtrakul, C. O. Jung, Stephen Krause, B. F. Cordts

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Structural development and defect formation during oxygen implantation of silicon-on-insulator material was studied by conventional and high resolution electron microscopy. The effects of implantation parameters: wafer temperature, dose, and current density were investigated. Wafer temperture had the largest effect on the type and character of the defects. In the top silicon layer of samples implanted at 350°C, microtwins and short stacking faults were present. From 450-550°C, stacking faults grew in length but microtwinning was reduced. From 550-700°C, a new type of defect, a multiply faulted defect (MFD), was observed and trails of oxygen bubbles formed at the surface. In the substrate beneath the buried oxide layer, stacking faults and {113} defects were present at all temperatures. The defect density in an annealed material is significantly reduced for samples implanted at ≥ 600°C. Correlation between the defect structure in as-implanted and annealed material will be discussed.

Original language	English (US)
Title of host publication	Proceedings - The Electrochemical Society
Editors	Dennis N. Schmidt, K. Izumi, Peter L.F. Hemment, Glenn W. Cullen
Publisher	Publ by Electrochemical Soc Inc
Pages	106-119
Number of pages	14
Volume	90
Edition	6
State	Published - Jan 1990
Event	Proceedings of the Fourth International Symposium on Silicon-on-Insulator Technology and Devices - Montreal, Que, Can Duration: May 8 1990 → May 11 1990

Other

Other	Proceedings of the Fourth International Symposium on Silicon-on-Insulator Technology and Devices
City	Montreal, Que, Can
Period	5/8/90 → 5/11/90

ASJC Scopus subject areas

General Engineering

Cite this

Structure and defect development during implantation of SIMOX material. / Visitserngtrakul, S.; Jung, C. O.; Krause, Stephen et al.
Proceedings - The Electrochemical Society. ed. / Dennis N. Schmidt; K. Izumi; Peter L.F. Hemment; Glenn W. Cullen. Vol. 90 6. ed. Publ by Electrochemical Soc Inc, 1990. p. 106-119.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Visitserngtrakul, S, Jung, CO, Krause, S & Cordts, BF 1990, Structure and defect development during implantation of SIMOX material. in DN Schmidt, K Izumi, PLF Hemment & GW Cullen (eds), Proceedings - The Electrochemical Society. 6 edn, vol. 90, Publ by Electrochemical Soc Inc, pp. 106-119, Proceedings of the Fourth International Symposium on Silicon-on-Insulator Technology and Devices, Montreal, Que, Can, 5/8/90.

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abstract = "Structural development and defect formation during oxygen implantation of silicon-on-insulator material was studied by conventional and high resolution electron microscopy. The effects of implantation parameters: wafer temperature, dose, and current density were investigated. Wafer temperture had the largest effect on the type and character of the defects. In the top silicon layer of samples implanted at 350°C, microtwins and short stacking faults were present. From 450-550°C, stacking faults grew in length but microtwinning was reduced. From 550-700°C, a new type of defect, a multiply faulted defect (MFD), was observed and trails of oxygen bubbles formed at the surface. In the substrate beneath the buried oxide layer, stacking faults and {113} defects were present at all temperatures. The defect density in an annealed material is significantly reduced for samples implanted at ≥ 600°C. Correlation between the defect structure in as-implanted and annealed material will be discussed.",

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AU - Krause, Stephen

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N2 - Structural development and defect formation during oxygen implantation of silicon-on-insulator material was studied by conventional and high resolution electron microscopy. The effects of implantation parameters: wafer temperature, dose, and current density were investigated. Wafer temperture had the largest effect on the type and character of the defects. In the top silicon layer of samples implanted at 350°C, microtwins and short stacking faults were present. From 450-550°C, stacking faults grew in length but microtwinning was reduced. From 550-700°C, a new type of defect, a multiply faulted defect (MFD), was observed and trails of oxygen bubbles formed at the surface. In the substrate beneath the buried oxide layer, stacking faults and {113} defects were present at all temperatures. The defect density in an annealed material is significantly reduced for samples implanted at ≥ 600°C. Correlation between the defect structure in as-implanted and annealed material will be discussed.

AB - Structural development and defect formation during oxygen implantation of silicon-on-insulator material was studied by conventional and high resolution electron microscopy. The effects of implantation parameters: wafer temperature, dose, and current density were investigated. Wafer temperture had the largest effect on the type and character of the defects. In the top silicon layer of samples implanted at 350°C, microtwins and short stacking faults were present. From 450-550°C, stacking faults grew in length but microtwinning was reduced. From 550-700°C, a new type of defect, a multiply faulted defect (MFD), was observed and trails of oxygen bubbles formed at the surface. In the substrate beneath the buried oxide layer, stacking faults and {113} defects were present at all temperatures. The defect density in an annealed material is significantly reduced for samples implanted at ≥ 600°C. Correlation between the defect structure in as-implanted and annealed material will be discussed.

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Y2 - 8 May 1990 through 11 May 1990

ER -

Structure and defect development during implantation of SIMOX material

Abstract

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ASJC Scopus subject areas

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