Structural studies of amorphous semiconducting thin films using interference enhanced raman scattering

C. C. Tsai; R. J. Nemanich

doi:10.1016/0022-3093(80)90361-0

Structural studies of amorphous semiconducting thin films using interference enhanced raman scattering

C. C. Tsai, R. J. Nemanich

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20 Scopus citations

Abstract

A new technique, interference enhanced Raman scattering, is used to obtain the Raman spectra of very thin amorphous films (∼50-350Å) of elemental semiconductors with quite different atomic coordinations, which include As, B, Se and Si:H. These thin films show spectra which are essentially similar to the thick film or bulk sample counterparts, however, the scattering intensity is enhanced. The photo-induced oxidation in a-As and the hydrogen evolution due to annealing in a-Si:H are investigated by using the interference enhanced Raman scattering technique.

Original language	English (US)
Pages (from-to)	1203-1208
Number of pages	6
Journal	Journal of Non-Crystalline Solids
Volume	35-36
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(80)90361-0
State	Published - 1980
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(80)90361-0

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@article{5172a4c2aa3f420ea4f0dc540c5ffac1,

title = "Structural studies of amorphous semiconducting thin films using interference enhanced raman scattering",

abstract = "A new technique, interference enhanced Raman scattering, is used to obtain the Raman spectra of very thin amorphous films (∼50-350{\AA}) of elemental semiconductors with quite different atomic coordinations, which include As, B, Se and Si:H. These thin films show spectra which are essentially similar to the thick film or bulk sample counterparts, however, the scattering intensity is enhanced. The photo-induced oxidation in a-As and the hydrogen evolution due to annealing in a-Si:H are investigated by using the interference enhanced Raman scattering technique.",

author = "Tsai, {C. C.} and Nemanich, {R. J.}",

year = "1980",

doi = "10.1016/0022-3093(80)90361-0",

language = "English (US)",

volume = "35-36",

pages = "1203--1208",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

number = "PART 2",

}

TY - JOUR

T1 - Structural studies of amorphous semiconducting thin films using interference enhanced raman scattering

AU - Tsai, C. C.

AU - Nemanich, R. J.

PY - 1980

Y1 - 1980

N2 - A new technique, interference enhanced Raman scattering, is used to obtain the Raman spectra of very thin amorphous films (∼50-350Å) of elemental semiconductors with quite different atomic coordinations, which include As, B, Se and Si:H. These thin films show spectra which are essentially similar to the thick film or bulk sample counterparts, however, the scattering intensity is enhanced. The photo-induced oxidation in a-As and the hydrogen evolution due to annealing in a-Si:H are investigated by using the interference enhanced Raman scattering technique.

AB - A new technique, interference enhanced Raman scattering, is used to obtain the Raman spectra of very thin amorphous films (∼50-350Å) of elemental semiconductors with quite different atomic coordinations, which include As, B, Se and Si:H. These thin films show spectra which are essentially similar to the thick film or bulk sample counterparts, however, the scattering intensity is enhanced. The photo-induced oxidation in a-As and the hydrogen evolution due to annealing in a-Si:H are investigated by using the interference enhanced Raman scattering technique.

UR - http://www.scopus.com/inward/record.url?scp=0018334580&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018334580&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(80)90361-0

DO - 10.1016/0022-3093(80)90361-0

M3 - Article

AN - SCOPUS:0018334580

SN - 0022-3093

VL - 35-36

SP - 1203

EP - 1208

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Structural studies of amorphous semiconducting thin films using interference enhanced raman scattering

Abstract

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