Structural studies of amorphous semiconducting thin films using interference enhanced raman scattering

C. C. Tsai, R. J. Nemanich

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

A new technique, interference enhanced Raman scattering, is used to obtain the Raman spectra of very thin amorphous films (∼50-350Å) of elemental semiconductors with quite different atomic coordinations, which include As, B, Se and Si:H. These thin films show spectra which are essentially similar to the thick film or bulk sample counterparts, however, the scattering intensity is enhanced. The photo-induced oxidation in a-As and the hydrogen evolution due to annealing in a-Si:H are investigated by using the interference enhanced Raman scattering technique.

Original languageEnglish (US)
Pages (from-to)1203-1208
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume35-36
Issue numberPART 2
DOIs
StatePublished - 1980
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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