Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

X. Liu, David Smith, J. Fan, Y. H. Zhang, H. Cao, Y. P. Chen, J. Leiner, B. J. Kirby, M. Dobrowolska, J. K. Furdyna

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Abstract

Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.

Original languageEnglish (US)
Article number171903
JournalApplied Physics Letters
Volume99
Issue number17
DOIs
StatePublished - Oct 24 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Liu, X., Smith, D., Fan, J., Zhang, Y. H., Cao, H., Chen, Y. P., Leiner, J., Kirby, B. J., Dobrowolska, M., & Furdyna, J. K. (2011). Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates. Applied Physics Letters, 99(17), [171903]. https://doi.org/10.1063/1.3655995