Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

X. Liu, David Smith, J. Fan, Y. H. Zhang, H. Cao, Y. P. Chen, J. Leiner, B. J. Kirby, M. Dobrowolska, J. K. Furdyna

Research output: Contribution to journal › Article

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Abstract

Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.

Original languageEnglish (US)
Article number171903
JournalApplied Physics Letters
Volume99
Issue number17
DOIs
StatePublished - Oct 24 2011

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molecular beam epitaxy
insulators
transmission electron microscopy
symmetry
thin films
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates. / Liu, X.; Smith, David; Fan, J.; Zhang, Y. H.; Cao, H.; Chen, Y. P.; Leiner, J.; Kirby, B. J.; Dobrowolska, M.; Furdyna, J. K.

In: Applied Physics Letters, Vol. 99, No. 17, 171903, 24.10.2011.

Research output: Contribution to journal › Article

Liu, X, Smith, D, Fan, J, Zhang, YH, Cao, H, Chen, YP, Leiner, J, Kirby, BJ, Dobrowolska, M & Furdyna, JK 2011, 'Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates', Applied Physics Letters, vol. 99, no. 17, 171903. https://doi.org/10.1063/1.3655995
Liu X, Smith D, Fan J, Zhang YH, Cao H, Chen YP et al. Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates. Applied Physics Letters. 2011 Oct 24;99(17). 171903. https://doi.org/10.1063/1.3655995
Liu, X. ; Smith, David ; Fan, J. ; Zhang, Y. H. ; Cao, H. ; Chen, Y. P. ; Leiner, J. ; Kirby, B. J. ; Dobrowolska, M. ; Furdyna, J. K. / Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates. In: Applied Physics Letters. 2011 ; Vol. 99, No. 17.
@article{bef30cc131f6433dbd98d4178e88c645,
title = "Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates",
abstract = "Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.",
author = "X. Liu and David Smith and J. Fan and Zhang, {Y. H.} and H. Cao and Chen, {Y. P.} and J. Leiner and Kirby, {B. J.} and M. Dobrowolska and Furdyna, {J. K.}",
year = "2011",
month = "10",
day = "24",
doi = "10.1063/1.3655995",
language = "English (US)",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

AU - Liu, X.

AU - Smith, David

AU - Fan, J.

AU - Zhang, Y. H.

AU - Cao, H.

AU - Chen, Y. P.

AU - Leiner, J.

AU - Kirby, B. J.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

PY - 2011/10/24

Y1 - 2011/10/24

N2 - Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.

AB - Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.

UR - http://www.scopus.com/inward/record.url?scp=80555129573&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80555129573&partnerID=8YFLogxK

U2 - 10.1063/1.3655995

DO - 10.1063/1.3655995

M3 - Article

AN - SCOPUS:80555129573

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 171903

ER -

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