Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

X. Liu, David Smith, J. Fan, Y. H. Zhang, H. Cao, Y. P. Chen, J. Leiner, B. J. Kirby, M. Dobrowolska, J. K. Furdyna

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Abstract

Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.

Original languageEnglish (US)
Article number171903
JournalApplied Physics Letters
Volume99
Issue number17
DOIs
StatePublished - Oct 24 2011

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molecular beam epitaxy
insulators
transmission electron microscopy
symmetry
thin films
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates. / Liu, X.; Smith, David; Fan, J.; Zhang, Y. H.; Cao, H.; Chen, Y. P.; Leiner, J.; Kirby, B. J.; Dobrowolska, M.; Furdyna, J. K.

In: Applied Physics Letters, Vol. 99, No. 17, 171903, 24.10.2011.

Research output: Contribution to journalArticle

Liu, X, Smith, D, Fan, J, Zhang, YH, Cao, H, Chen, YP, Leiner, J, Kirby, BJ, Dobrowolska, M & Furdyna, JK 2011, 'Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates', Applied Physics Letters, vol. 99, no. 17, 171903. https://doi.org/10.1063/1.3655995
Liu, X. ; Smith, David ; Fan, J. ; Zhang, Y. H. ; Cao, H. ; Chen, Y. P. ; Leiner, J. ; Kirby, B. J. ; Dobrowolska, M. ; Furdyna, J. K. / Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates. In: Applied Physics Letters. 2011 ; Vol. 99, No. 17.
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