Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

X. Liu; David Smith; J. Fan; Y. H. Zhang; H. Cao; Y. P. Chen; J. Leiner; B. J. Kirby; M. Dobrowolska; J. K. Furdyna

doi:10.1063/1.3655995

Structural properties of Bi₂Te₃ and Bi ₂Se₃ topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

X. Liu, David Smith, J. Fan, Y. H. Zhang, H. Cao, Y. P. Chen, J. Leiner, B. J. Kirby, M. Dobrowolska, J. K. Furdyna

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

Thin films of Bi₂Te₃ and Bi₂Se₃ have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.

Original language	English (US)
Article number	171903
Journal	Applied Physics Letters
Volume	99
Issue number	17
DOIs	https://doi.org/10.1063/1.3655995
State	Published - Oct 24 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3655995

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Structural properties of Bi₂Te₃ and Bi ₂Se₃ topological insulators grown by molecular beam epitaxy on GaAs(001) substrates. / Liu, X.; Smith, David; Fan, J.; Zhang, Y. H.; Cao, H.; Chen, Y. P.; Leiner, J.; Kirby, B. J.; Dobrowolska, M.; Furdyna, J. K.

In: Applied Physics Letters, Vol. 99, No. 17, 171903, 24.10.2011.

Research output: Contribution to journal › Article › peer-review

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title = "Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates",

abstract = "Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.",

author = "X. Liu and David Smith and J. Fan and Zhang, {Y. H.} and H. Cao and Chen, {Y. P.} and J. Leiner and Kirby, {B. J.} and M. Dobrowolska and Furdyna, {J. K.}",

note = "Funding Information: This work was supported by NSF Grant DMR10-05851 for ND; for ASU an NSF grant, contract number 1002114 and an AFOSR Grant number FA9550-10-1-0129; Y.P.C. acknowledges support from DARPA MESO program. The authors acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University and the x-ray reflectometer at the NIST Center for Neutron Research.",

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AU - Liu, X.

AU - Smith, David

AU - Fan, J.

AU - Zhang, Y. H.

AU - Cao, H.

AU - Chen, Y. P.

AU - Leiner, J.

AU - Kirby, B. J.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

N1 - Funding Information: This work was supported by NSF Grant DMR10-05851 for ND; for ASU an NSF grant, contract number 1002114 and an AFOSR Grant number FA9550-10-1-0129; Y.P.C. acknowledges support from DARPA MESO program. The authors acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University and the x-ray reflectometer at the NIST Center for Neutron Research.

PY - 2011/10/24

Y1 - 2011/10/24

N2 - Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.

AB - Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.

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Structural properties of Bi₂Te₃ and Bi ₂Se₃ topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

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