Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

J. Bai, M. Dudley, L. Chen, Brian Skromme, B. Wagner, R. F. Davis, U. Chowdhury, R. D. Dupuis

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The microstructure and luminescence properties of a series of GaN epilayers grown on sapphire and SiC substrates with various misorientations have been correlated to assess the origins of the luminescence features in the misoriented samples. Samples grown on 3.5° offcut SiC and 5° and 9° offcut sapphire substrates both exhibit photoluminescence peaks near ~3.2 and ~3.4 eV, which are absent in the on-axis SiC and sapphire cases. Transmission electron microscopy shows that the misoriented samples have configurations of I1 basal plane stacking faults, which fold into prismatic stacking faults with stair-rod dislocations at their intersections. The luminescence features are proposed to possibly arise from transitions involving the prismatic stacking faults andor the stair-rod dislocations associated with their mutual intersections and their intersections with the basal plane stacking faults.

Original languageEnglish (US)
Article number116101
JournalJournal of Applied Physics
Volume97
Issue number11
DOIs
StatePublished - 2005

Fingerprint

crystal defects
intersections
luminescence
sapphire
defects
rods
misalignment
photoluminescence
transmission electron microscopy
microstructure
configurations

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates. / Bai, J.; Dudley, M.; Chen, L.; Skromme, Brian; Wagner, B.; Davis, R. F.; Chowdhury, U.; Dupuis, R. D.

In: Journal of Applied Physics, Vol. 97, No. 11, 116101, 2005.

Research output: Contribution to journalArticle

Bai, J. ; Dudley, M. ; Chen, L. ; Skromme, Brian ; Wagner, B. ; Davis, R. F. ; Chowdhury, U. ; Dupuis, R. D. / Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates. In: Journal of Applied Physics. 2005 ; Vol. 97, No. 11.
@article{64eefb826a404592a2f3fbf95ca99184,
title = "Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates",
abstract = "The microstructure and luminescence properties of a series of GaN epilayers grown on sapphire and SiC substrates with various misorientations have been correlated to assess the origins of the luminescence features in the misoriented samples. Samples grown on 3.5° offcut SiC and 5° and 9° offcut sapphire substrates both exhibit photoluminescence peaks near ~3.2 and ~3.4 eV, which are absent in the on-axis SiC and sapphire cases. Transmission electron microscopy shows that the misoriented samples have configurations of I1 basal plane stacking faults, which fold into prismatic stacking faults with stair-rod dislocations at their intersections. The luminescence features are proposed to possibly arise from transitions involving the prismatic stacking faults andor the stair-rod dislocations associated with their mutual intersections and their intersections with the basal plane stacking faults.",
author = "J. Bai and M. Dudley and L. Chen and Brian Skromme and B. Wagner and Davis, {R. F.} and U. Chowdhury and Dupuis, {R. D.}",
year = "2005",
doi = "10.1063/1.1914956",
language = "English (US)",
volume = "97",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

AU - Bai, J.

AU - Dudley, M.

AU - Chen, L.

AU - Skromme, Brian

AU - Wagner, B.

AU - Davis, R. F.

AU - Chowdhury, U.

AU - Dupuis, R. D.

PY - 2005

Y1 - 2005

N2 - The microstructure and luminescence properties of a series of GaN epilayers grown on sapphire and SiC substrates with various misorientations have been correlated to assess the origins of the luminescence features in the misoriented samples. Samples grown on 3.5° offcut SiC and 5° and 9° offcut sapphire substrates both exhibit photoluminescence peaks near ~3.2 and ~3.4 eV, which are absent in the on-axis SiC and sapphire cases. Transmission electron microscopy shows that the misoriented samples have configurations of I1 basal plane stacking faults, which fold into prismatic stacking faults with stair-rod dislocations at their intersections. The luminescence features are proposed to possibly arise from transitions involving the prismatic stacking faults andor the stair-rod dislocations associated with their mutual intersections and their intersections with the basal plane stacking faults.

AB - The microstructure and luminescence properties of a series of GaN epilayers grown on sapphire and SiC substrates with various misorientations have been correlated to assess the origins of the luminescence features in the misoriented samples. Samples grown on 3.5° offcut SiC and 5° and 9° offcut sapphire substrates both exhibit photoluminescence peaks near ~3.2 and ~3.4 eV, which are absent in the on-axis SiC and sapphire cases. Transmission electron microscopy shows that the misoriented samples have configurations of I1 basal plane stacking faults, which fold into prismatic stacking faults with stair-rod dislocations at their intersections. The luminescence features are proposed to possibly arise from transitions involving the prismatic stacking faults andor the stair-rod dislocations associated with their mutual intersections and their intersections with the basal plane stacking faults.

UR - http://www.scopus.com/inward/record.url?scp=20544448888&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20544448888&partnerID=8YFLogxK

U2 - 10.1063/1.1914956

DO - 10.1063/1.1914956

M3 - Article

AN - SCOPUS:20544448888

VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 116101

ER -