Structural characterization of lattice matched AlxIn 1-xAs/InP and GayIn1-yAs/InP heterostructures by transmission electron microscopy and high-resolution x-ray diffraction

E. Carlino, C. Giannini, L. Tapfer, M. Catalano, E. Tournié, Y. H. Zhang, K. H. Ploog

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In this work we report on transmission electron microscopy and high-resolution x-ray diffractometry studies of lattice matched Al xIn1-xAs/InP and GayIn1-yAs/InP epilayers grown by molecular beam epitaxy on InP(100) substrates. High-resolution and diffraction contrast electron microscopy measurements show the presence of different contrast zones in the epilayers. The analysis of high-resolution x-ray diffraction measurements and computer simulations ascribe these zones to the presence of a compositional gradient in the epilayers. A comparison among investigated samples grown under slightly different growth conditions combined with an analysis of the crystal defects is presented. Growth-induced small variations in the chemical composition of the epilayer can produce differences in the structural quality of the epitaxial layer. Finally, a few monolayers thick and highly strained film of InAsP, is observed in all investigated samples at the substrate/epilayer interface. The formation of this interface layer is explained by the exchange of As and P during exposure of the InP surface to As4 before the growth.

Original languageEnglish (US)
Pages (from-to)2403-2410
Number of pages8
JournalJournal of Applied Physics
Issue number4
StatePublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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