Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples

Yu I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, Shane Johnson, X. Lu, M. E. Ware, S. Q. Yu, T. Tiedje, G. J. Salamo

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A set of high quality single quantum well samples of GaAs 1-xBix with bismuth concentrations not exceeding 6 and well widths ranging from 7.5 to 13 nm grown by molecular beam epitaxy on a GaAs substrate at low temperature is studied by means of photoluminescence (PL). It is shown that the PL line shape changes when the exciton reduced mass behavior changes from an anomalous increase (x < 5) to a conventional decrease (x > 5). Strongly non-monotonous PL bandwidth dependence on the excitation intensity is revealed and interpreted in terms of optically unresolved contributions from the saturable emission of bound free excitons.

Original languageEnglish (US)
Article number144308
JournalJournal of Applied Physics
Volume113
Issue number14
DOIs
StatePublished - Apr 14 2013

Fingerprint

line shape
quantum wells
photoluminescence
excitons
excitation
bismuth
molecular beam epitaxy
bandwidth

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples. / Mazur, Yu I.; Dorogan, V. G.; Schmidbauer, M.; Tarasov, G. G.; Johnson, Shane; Lu, X.; Ware, M. E.; Yu, S. Q.; Tiedje, T.; Salamo, G. J.

In: Journal of Applied Physics, Vol. 113, No. 14, 144308, 14.04.2013.

Research output: Contribution to journalArticle

Mazur, YI, Dorogan, VG, Schmidbauer, M, Tarasov, GG, Johnson, S, Lu, X, Ware, ME, Yu, SQ, Tiedje, T & Salamo, GJ 2013, 'Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples', Journal of Applied Physics, vol. 113, no. 14, 144308. https://doi.org/10.1063/1.4801429
Mazur, Yu I. ; Dorogan, V. G. ; Schmidbauer, M. ; Tarasov, G. G. ; Johnson, Shane ; Lu, X. ; Ware, M. E. ; Yu, S. Q. ; Tiedje, T. ; Salamo, G. J. / Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples. In: Journal of Applied Physics. 2013 ; Vol. 113, No. 14.
@article{2a057e9f9ab54c25abcb46e3979677eb,
title = "Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples",
abstract = "A set of high quality single quantum well samples of GaAs 1-xBix with bismuth concentrations not exceeding 6 and well widths ranging from 7.5 to 13 nm grown by molecular beam epitaxy on a GaAs substrate at low temperature is studied by means of photoluminescence (PL). It is shown that the PL line shape changes when the exciton reduced mass behavior changes from an anomalous increase (x < 5) to a conventional decrease (x > 5). Strongly non-monotonous PL bandwidth dependence on the excitation intensity is revealed and interpreted in terms of optically unresolved contributions from the saturable emission of bound free excitons.",
author = "Mazur, {Yu I.} and Dorogan, {V. G.} and M. Schmidbauer and Tarasov, {G. G.} and Shane Johnson and X. Lu and Ware, {M. E.} and Yu, {S. Q.} and T. Tiedje and Salamo, {G. J.}",
year = "2013",
month = "4",
day = "14",
doi = "10.1063/1.4801429",
language = "English (US)",
volume = "113",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples

AU - Mazur, Yu I.

AU - Dorogan, V. G.

AU - Schmidbauer, M.

AU - Tarasov, G. G.

AU - Johnson, Shane

AU - Lu, X.

AU - Ware, M. E.

AU - Yu, S. Q.

AU - Tiedje, T.

AU - Salamo, G. J.

PY - 2013/4/14

Y1 - 2013/4/14

N2 - A set of high quality single quantum well samples of GaAs 1-xBix with bismuth concentrations not exceeding 6 and well widths ranging from 7.5 to 13 nm grown by molecular beam epitaxy on a GaAs substrate at low temperature is studied by means of photoluminescence (PL). It is shown that the PL line shape changes when the exciton reduced mass behavior changes from an anomalous increase (x < 5) to a conventional decrease (x > 5). Strongly non-monotonous PL bandwidth dependence on the excitation intensity is revealed and interpreted in terms of optically unresolved contributions from the saturable emission of bound free excitons.

AB - A set of high quality single quantum well samples of GaAs 1-xBix with bismuth concentrations not exceeding 6 and well widths ranging from 7.5 to 13 nm grown by molecular beam epitaxy on a GaAs substrate at low temperature is studied by means of photoluminescence (PL). It is shown that the PL line shape changes when the exciton reduced mass behavior changes from an anomalous increase (x < 5) to a conventional decrease (x > 5). Strongly non-monotonous PL bandwidth dependence on the excitation intensity is revealed and interpreted in terms of optically unresolved contributions from the saturable emission of bound free excitons.

UR - http://www.scopus.com/inward/record.url?scp=84876389699&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876389699&partnerID=8YFLogxK

U2 - 10.1063/1.4801429

DO - 10.1063/1.4801429

M3 - Article

AN - SCOPUS:84876389699

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 14

M1 - 144308

ER -