Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples

Yu I. Mazur; V. G. Dorogan; M. Schmidbauer; G. G. Tarasov; Shane Johnson; X. Lu; M. E. Ware; S. Q. Yu; T. Tiedje; G. J. Salamo

doi:10.1063/1.4801429

Strong excitation intensity dependence of the photoluminescence line shape in GaAs_1-xBi_x single quantum well samples

Yu I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, Shane Johnson, X. Lu, M. E. Ware, S. Q. Yu, T. Tiedje, G. J. Salamo

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17 Scopus citations

Abstract

A set of high quality single quantum well samples of GaAs _1-xBi_x with bismuth concentrations not exceeding 6 and well widths ranging from 7.5 to 13 nm grown by molecular beam epitaxy on a GaAs substrate at low temperature is studied by means of photoluminescence (PL). It is shown that the PL line shape changes when the exciton reduced mass behavior changes from an anomalous increase (x < 5) to a conventional decrease (x > 5). Strongly non-monotonous PL bandwidth dependence on the excitation intensity is revealed and interpreted in terms of optically unresolved contributions from the saturable emission of bound free excitons.

Original language	English (US)
Article number	144308
Journal	Journal of Applied Physics
Volume	113
Issue number	14
DOIs	https://doi.org/10.1063/1.4801429
State	Published - Apr 14 2013

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.4801429

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@article{2a057e9f9ab54c25abcb46e3979677eb,

title = "Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples",

abstract = "A set of high quality single quantum well samples of GaAs 1-xBix with bismuth concentrations not exceeding 6 and well widths ranging from 7.5 to 13 nm grown by molecular beam epitaxy on a GaAs substrate at low temperature is studied by means of photoluminescence (PL). It is shown that the PL line shape changes when the exciton reduced mass behavior changes from an anomalous increase (x < 5) to a conventional decrease (x > 5). Strongly non-monotonous PL bandwidth dependence on the excitation intensity is revealed and interpreted in terms of optically unresolved contributions from the saturable emission of bound free excitons.",

author = "Mazur, {Yu I.} and Dorogan, {V. G.} and M. Schmidbauer and Tarasov, {G. G.} and Shane Johnson and X. Lu and Ware, {M. E.} and Yu, {S. Q.} and T. Tiedje and Salamo, {G. J.}",

note = "Funding Information: The authors acknowledge the financial support by the US National Science Foundation (NSF) via Grant No. DMR-0520550 and MWN (Material World Network) Program between the NSF (Grant No. DMR-1008107) and the Deutsche Forschungsgemeinschaft (Grant No. Li 580/8-1). S.-Q. Yu acknowledges support by NSF Career Award No. DMR-1149605.",

year = "2013",

month = apr,

day = "14",

doi = "10.1063/1.4801429",

language = "English (US)",

volume = "113",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "14",

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TY - JOUR

T1 - Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples

AU - Mazur, Yu I.

AU - Dorogan, V. G.

AU - Schmidbauer, M.

AU - Tarasov, G. G.

AU - Johnson, Shane

AU - Lu, X.

AU - Ware, M. E.

AU - Yu, S. Q.

AU - Tiedje, T.

AU - Salamo, G. J.

N1 - Funding Information: The authors acknowledge the financial support by the US National Science Foundation (NSF) via Grant No. DMR-0520550 and MWN (Material World Network) Program between the NSF (Grant No. DMR-1008107) and the Deutsche Forschungsgemeinschaft (Grant No. Li 580/8-1). S.-Q. Yu acknowledges support by NSF Career Award No. DMR-1149605.

PY - 2013/4/14

Y1 - 2013/4/14

N2 - A set of high quality single quantum well samples of GaAs 1-xBix with bismuth concentrations not exceeding 6 and well widths ranging from 7.5 to 13 nm grown by molecular beam epitaxy on a GaAs substrate at low temperature is studied by means of photoluminescence (PL). It is shown that the PL line shape changes when the exciton reduced mass behavior changes from an anomalous increase (x < 5) to a conventional decrease (x > 5). Strongly non-monotonous PL bandwidth dependence on the excitation intensity is revealed and interpreted in terms of optically unresolved contributions from the saturable emission of bound free excitons.

AB - A set of high quality single quantum well samples of GaAs 1-xBix with bismuth concentrations not exceeding 6 and well widths ranging from 7.5 to 13 nm grown by molecular beam epitaxy on a GaAs substrate at low temperature is studied by means of photoluminescence (PL). It is shown that the PL line shape changes when the exciton reduced mass behavior changes from an anomalous increase (x < 5) to a conventional decrease (x > 5). Strongly non-monotonous PL bandwidth dependence on the excitation intensity is revealed and interpreted in terms of optically unresolved contributions from the saturable emission of bound free excitons.

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DO - 10.1063/1.4801429

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 14

M1 - 144308

ER -

Strong excitation intensity dependence of the photoluminescence line shape in GaAs_1-xBi_x single quantum well samples

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