Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples

Yu I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, Shane Johnson, X. Lu, M. E. Ware, S. Q. Yu, T. Tiedje, G. J. Salamo

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17 Scopus citations


A set of high quality single quantum well samples of GaAs 1-xBix with bismuth concentrations not exceeding 6 and well widths ranging from 7.5 to 13 nm grown by molecular beam epitaxy on a GaAs substrate at low temperature is studied by means of photoluminescence (PL). It is shown that the PL line shape changes when the exciton reduced mass behavior changes from an anomalous increase (x < 5) to a conventional decrease (x > 5). Strongly non-monotonous PL bandwidth dependence on the excitation intensity is revealed and interpreted in terms of optically unresolved contributions from the saturable emission of bound free excitons.

Original languageEnglish (US)
Article number144308
JournalJournal of Applied Physics
Issue number14
StatePublished - Apr 14 2013

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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