TY - JOUR
T1 - Strain-Tunable Single Photon Sources in WSe2 Monolayers
AU - Iff, Oliver
AU - Tedeschi, Davide
AU - Martín-Sánchez, Javier
AU - Moczała-Dusanowska, Magdalena
AU - Tongay, Sefaattin
AU - Yumigeta, Kentaro
AU - Taboada-Gutiérrez, Javier
AU - Savaresi, Matteo
AU - Rastelli, Armando
AU - Alonso-González, Pablo
AU - Höfling, Sven
AU - Trotta, Rinaldo
AU - Schneider, Christian
N1 - Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/10/9
Y1 - 2019/10/9
N2 - The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultracompact quantum technology in which elastic strain engineering can be used to tailor their emission properties. Here, we show a compact and hybrid two-dimensional semiconductor-piezoelectric device that allows for controlling the energy of single photons emitted by quantum emitters localized in wrinkled WSe2 monolayers. We demonstrate that strain fields exerted by the piezoelectric device can be used to tune the energy of localized excitons in WSe2 up to 18 meV in a reversible manner while leaving the single photon purity unaffected over a wide range. Interestingly, we find that the magnitude and, in particular, the sign of the energy shift as a function of stress is emitter dependent. With the help of finite element simulations we suggest a simple model that explains our experimental observations and, furthermore, discloses that the type of strain (tensile or compressive) experienced by the quantum emitters strongly depends on their localization across the wrinkles. Our findings are of strong relevance for the practical implementation of single photon devices based on two-dimensional materials as well as for understanding the effects of strain on their emission properties.
AB - The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultracompact quantum technology in which elastic strain engineering can be used to tailor their emission properties. Here, we show a compact and hybrid two-dimensional semiconductor-piezoelectric device that allows for controlling the energy of single photons emitted by quantum emitters localized in wrinkled WSe2 monolayers. We demonstrate that strain fields exerted by the piezoelectric device can be used to tune the energy of localized excitons in WSe2 up to 18 meV in a reversible manner while leaving the single photon purity unaffected over a wide range. Interestingly, we find that the magnitude and, in particular, the sign of the energy shift as a function of stress is emitter dependent. With the help of finite element simulations we suggest a simple model that explains our experimental observations and, furthermore, discloses that the type of strain (tensile or compressive) experienced by the quantum emitters strongly depends on their localization across the wrinkles. Our findings are of strong relevance for the practical implementation of single photon devices based on two-dimensional materials as well as for understanding the effects of strain on their emission properties.
KW - 2D materials
KW - elastic strain engineering
KW - photoluminescence
KW - piezoelectric devices
KW - single photon emitters
KW - tungsten diselenide monolayers
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U2 - 10.1021/acs.nanolett.9b02221
DO - 10.1021/acs.nanolett.9b02221
M3 - Article
C2 - 31486648
AN - SCOPUS:85072958244
SN - 1530-6984
VL - 19
SP - 6931
EP - 6936
JO - Nano Letters
JF - Nano Letters
IS - 10
ER -