Strain relaxation mechanisms in AlGaN epitaxy on AlN templates

Zhihao Wu, Kentaro Nonaka, Yohjiro Kawai, Toshiaki Asai, Fernando Ponce, Changqing Chen, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Two strain relaxation processes have been observed in AGaN layers grown on thick AlN templates. In Process I, a-type threading dislocations (TDs) with b = 1/3(112̄0) from the AlN underlayer are inclined away from the [0001] axis toward the (11̄00) directions when they enter the AlGaN film, forming dislocation line projection perpendicular to the Burger vector. In Process II, a + c-type TDs from the AlN underlayer with Burgers vector of b = 1/3(112̄3) glide on (01̄11) planes when they enter the AlGaN film to generate interfacial misfit dislocations lying along the (2̄110) directions at the AlGaN/AlN interface.

Original languageEnglish (US)
Article number111003
JournalApplied Physics Express
Volume3
Issue number11
DOIs
StatePublished - Nov 2010

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Strain relaxation
Burgers vector
Dislocations (crystals)
Epitaxial growth
epitaxy
templates
Relaxation processes
projection

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Wu, Z., Nonaka, K., Kawai, Y., Asai, T., Ponce, F., Chen, C., ... Akasaki, I. (2010). Strain relaxation mechanisms in AlGaN epitaxy on AlN templates. Applied Physics Express, 3(11), [111003]. https://doi.org/10.1143/APEX.3.111003

Strain relaxation mechanisms in AlGaN epitaxy on AlN templates. / Wu, Zhihao; Nonaka, Kentaro; Kawai, Yohjiro; Asai, Toshiaki; Ponce, Fernando; Chen, Changqing; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu.

In: Applied Physics Express, Vol. 3, No. 11, 111003, 11.2010.

Research output: Contribution to journalArticle

Wu, Z, Nonaka, K, Kawai, Y, Asai, T, Ponce, F, Chen, C, Iwaya, M, Kamiyama, S, Amano, H & Akasaki, I 2010, 'Strain relaxation mechanisms in AlGaN epitaxy on AlN templates', Applied Physics Express, vol. 3, no. 11, 111003. https://doi.org/10.1143/APEX.3.111003
Wu, Zhihao ; Nonaka, Kentaro ; Kawai, Yohjiro ; Asai, Toshiaki ; Ponce, Fernando ; Chen, Changqing ; Iwaya, Motoaki ; Kamiyama, Satoshi ; Amano, Hiroshi ; Akasaki, Isamu. / Strain relaxation mechanisms in AlGaN epitaxy on AlN templates. In: Applied Physics Express. 2010 ; Vol. 3, No. 11.
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