Strain relaxation mechanisms in AlGaN epitaxy on AlN templates

Zhihao Wu, Kentaro Nonaka, Yohjiro Kawai, Toshiaki Asai, Fernando Ponce, Changqing Chen, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

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Abstract

Two strain relaxation processes have been observed in AGaN layers grown on thick AlN templates. In Process I, a-type threading dislocations (TDs) with b = 1/3(112̄0) from the AlN underlayer are inclined away from the [0001] axis toward the (11̄00) directions when they enter the AlGaN film, forming dislocation line projection perpendicular to the Burger vector. In Process II, a + c-type TDs from the AlN underlayer with Burgers vector of b = 1/3(112̄3) glide on (01̄11) planes when they enter the AlGaN film to generate interfacial misfit dislocations lying along the (2̄110) directions at the AlGaN/AlN interface.

Original languageEnglish (US)
Article number111003
JournalApplied Physics Express
Volume3
Issue number11
DOIs
Publication statusPublished - Nov 2010

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Wu, Z., Nonaka, K., Kawai, Y., Asai, T., Ponce, F., Chen, C., ... Akasaki, I. (2010). Strain relaxation mechanisms in AlGaN epitaxy on AlN templates. Applied Physics Express, 3(11), [111003]. https://doi.org/10.1143/APEX.3.111003