Strain relaxation mechanisms in AlGaN epitaxy on AlN templates

Zhihao Wu; Kentaro Nonaka; Yohjiro Kawai; Toshiaki Asai; Fernando Ponce; Changqing Chen; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki

doi:10.1143/APEX.3.111003

Strain relaxation mechanisms in AlGaN epitaxy on AlN templates

Zhihao Wu, Kentaro Nonaka, Yohjiro Kawai, Toshiaki Asai, Fernando Ponce, Changqing Chen, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Physics

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Two strain relaxation processes have been observed in AGaN layers grown on thick AlN templates. In Process I, a-type threading dislocations (TDs) with b = 1/3(112̄0) from the AlN underlayer are inclined away from the [0001] axis toward the (11̄00) directions when they enter the AlGaN film, forming dislocation line projection perpendicular to the Burger vector. In Process II, a + c-type TDs from the AlN underlayer with Burgers vector of b = 1/3(112̄3) glide on (01̄11) planes when they enter the AlGaN film to generate interfacial misfit dislocations lying along the (2̄110) directions at the AlGaN/AlN interface.

Original language	English (US)
Article number	111003
Journal	Applied Physics Express
Volume	3
Issue number	11
DOIs	https://doi.org/10.1143/APEX.3.111003
State	Published - Nov 2010

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Strain relaxation mechanisms in AlGaN epitaxy on AlN templates",

abstract = "Two strain relaxation processes have been observed in AGaN layers grown on thick AlN templates. In Process I, a-type threading dislocations (TDs) with b = 1/3(11{\=2}0) from the AlN underlayer are inclined away from the [0001] axis toward the (1{\=1}00) directions when they enter the AlGaN film, forming dislocation line projection perpendicular to the Burger vector. In Process II, a + c-type TDs from the AlN underlayer with Burgers vector of b = 1/3(11{\=2}3) glide on (0{\=1}11) planes when they enter the AlGaN film to generate interfacial misfit dislocations lying along the ({\=2}110) directions at the AlGaN/AlN interface.",

author = "Zhihao Wu and Kentaro Nonaka and Yohjiro Kawai and Toshiaki Asai and Fernando Ponce and Changqing Chen and Motoaki Iwaya and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki",

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doi = "10.1143/APEX.3.111003",

language = "English (US)",

volume = "3",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

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T1 - Strain relaxation mechanisms in AlGaN epitaxy on AlN templates

AU - Wu, Zhihao

AU - Nonaka, Kentaro

AU - Kawai, Yohjiro

AU - Asai, Toshiaki

AU - Ponce, Fernando

AU - Chen, Changqing

AU - Iwaya, Motoaki

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

PY - 2010/11

Y1 - 2010/11

N2 - Two strain relaxation processes have been observed in AGaN layers grown on thick AlN templates. In Process I, a-type threading dislocations (TDs) with b = 1/3(112̄0) from the AlN underlayer are inclined away from the [0001] axis toward the (11̄00) directions when they enter the AlGaN film, forming dislocation line projection perpendicular to the Burger vector. In Process II, a + c-type TDs from the AlN underlayer with Burgers vector of b = 1/3(112̄3) glide on (01̄11) planes when they enter the AlGaN film to generate interfacial misfit dislocations lying along the (2̄110) directions at the AlGaN/AlN interface.

AB - Two strain relaxation processes have been observed in AGaN layers grown on thick AlN templates. In Process I, a-type threading dislocations (TDs) with b = 1/3(112̄0) from the AlN underlayer are inclined away from the [0001] axis toward the (11̄00) directions when they enter the AlGaN film, forming dislocation line projection perpendicular to the Burger vector. In Process II, a + c-type TDs from the AlN underlayer with Burgers vector of b = 1/3(112̄3) glide on (01̄11) planes when they enter the AlGaN film to generate interfacial misfit dislocations lying along the (2̄110) directions at the AlGaN/AlN interface.

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Strain relaxation mechanisms in AlGaN epitaxy on AlN templates

Abstract

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