Strain measurements of SiGeC heteroepitaxial layers on Si(001) using ion beam analysis

S. Sego; Robert Culbertson; David Smith; Z. Atzmon; A. E. Bair

doi:10.1116/1.580103

Strain measurements of SiGeC heteroepitaxial layers on Si(001) using ion beam analysis

S. Sego, Robert Culbertson, David Smith, Z. Atzmon, A. E. Bair

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The strain in SiGeC heteroepitaxial films grown on Si(001) substrates by chemical vapor deposition is quantified using ion channeling. Rutherford backscattering spectrometry was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the C concentration, and ion channeling was utilized to measure film quality and C substitutionality. Channeling angular scans across an off-normal major axis were used to quantify the strain. The results confirm that addition of C compensates for the strain introduced by Ge.

Original language	English (US)
Pages (from-to)	441-446
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	14
Issue number	2
DOIs	https://doi.org/10.1116/1.580103
State	Published - 1996

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "The strain in SiGeC heteroepitaxial films grown on Si(001) substrates by chemical vapor deposition is quantified using ion channeling. Rutherford backscattering spectrometry was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the C concentration, and ion channeling was utilized to measure film quality and C substitutionality. Channeling angular scans across an off-normal major axis were used to quantify the strain. The results confirm that addition of C compensates for the strain introduced by Ge.",

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T1 - Strain measurements of SiGeC heteroepitaxial layers on Si(001) using ion beam analysis

AU - Sego, S.

AU - Culbertson, Robert

AU - Smith, David

AU - Atzmon, Z.

AU - Bair, A. E.

PY - 1996

Y1 - 1996

N2 - The strain in SiGeC heteroepitaxial films grown on Si(001) substrates by chemical vapor deposition is quantified using ion channeling. Rutherford backscattering spectrometry was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the C concentration, and ion channeling was utilized to measure film quality and C substitutionality. Channeling angular scans across an off-normal major axis were used to quantify the strain. The results confirm that addition of C compensates for the strain introduced by Ge.

AB - The strain in SiGeC heteroepitaxial films grown on Si(001) substrates by chemical vapor deposition is quantified using ion channeling. Rutherford backscattering spectrometry was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the C concentration, and ion channeling was utilized to measure film quality and C substitutionality. Channeling angular scans across an off-normal major axis were used to quantify the strain. The results confirm that addition of C compensates for the strain introduced by Ge.

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Strain measurements of SiGeC heteroepitaxial layers on Si(001) using ion beam analysis

Abstract

ASJC Scopus subject areas

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