Strain measurements of SiGeC heteroepitaxial layers on Si(001) using ion beam analysis

S. Sego, Robert Culbertson, David Smith, Z. Atzmon, A. E. Bair

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The strain in SiGeC heteroepitaxial films grown on Si(001) substrates by chemical vapor deposition is quantified using ion channeling. Rutherford backscattering spectrometry was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the C concentration, and ion channeling was utilized to measure film quality and C substitutionality. Channeling angular scans across an off-normal major axis were used to quantify the strain. The results confirm that addition of C compensates for the strain introduced by Ge.

Original languageEnglish (US)
Pages (from-to)441-446
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume14
Issue number2
DOIs
StatePublished - Jan 1 1996

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Strain measurements of SiGeC heteroepitaxial layers on Si(001) using ion beam analysis'. Together they form a unique fingerprint.

Cite this