Strain-driven alloying in Ge/Si(100) coherent islands

S. A. Chaparro, Jeffery Drucker, Y. Zhang, D. Chandrasekhar, Martha McCartney, David Smith

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Abstract

Ge/Si(100) island size distributions were monitored for coverages between 3.5 and 14.0 monolayers at growth temperatures from 450 to 600°C. Features in these distributions are correlated with characteristic island morphologies. The mean dome cluster size increased and the onset of island dislocation was delayed as the growth temperature increased. At 600°C, very large hut clusters are formed. This behavior is attributed to strain-assisted alloying of the Ge clusters. Energy dispersive x-ray analysis confirms Si diffusion into the Ge clusters at 600°C. An atomistic elastic model supports the interpretation that alloying is driven by strain energy enhancement near the island perimeters.

Original languageEnglish (US)
Pages (from-to)1199-1202
Number of pages4
JournalPhysical Review Letters
Volume83
Issue number6
StatePublished - Aug 9 1999

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alloying
x ray analysis
domes
temperature
energy
augmentation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Strain-driven alloying in Ge/Si(100) coherent islands. / Chaparro, S. A.; Drucker, Jeffery; Zhang, Y.; Chandrasekhar, D.; McCartney, Martha; Smith, David.

In: Physical Review Letters, Vol. 83, No. 6, 09.08.1999, p. 1199-1202.

Research output: Contribution to journalArticle

Chaparro, SA, Drucker, J, Zhang, Y, Chandrasekhar, D, McCartney, M & Smith, D 1999, 'Strain-driven alloying in Ge/Si(100) coherent islands', Physical Review Letters, vol. 83, no. 6, pp. 1199-1202.
Chaparro, S. A. ; Drucker, Jeffery ; Zhang, Y. ; Chandrasekhar, D. ; McCartney, Martha ; Smith, David. / Strain-driven alloying in Ge/Si(100) coherent islands. In: Physical Review Letters. 1999 ; Vol. 83, No. 6. pp. 1199-1202.
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