Statistical prediction of NBTI-induced circuit aging

Wenping Wang, Varsha Balakrishnan, Bo Yang, Yu Cao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

Accurate prediction of circuit aging and its variability is essential to reliable design and analysis. Such a capability further helps reduce the load in statistical reliability test. Based on the physical understanding of circuit aging effects, we develop a predictive short term and long term model to characterize NBTI-induced threshold voltage degradation (ΔVth) at transistor level. Due to process variations, we further develop analytical solutions that efficiently predict the statistics of circuit timing under temporal stress and process variations. These solutions prove that circuit aging and its variance can be fully predicted from the characteristics of transistor degradation and circuit performance sensitivity to aged parameters, independent on the type and the amount of process variations. The results are systematically validated by simulation and measurement data from an industrial 65nm technology, enhancing the predictability and efficiency of statistical reliability analysis.

Original languageEnglish (US)
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages416-419
Number of pages4
DOIs
StatePublished - 2008
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: Oct 20 2008Oct 23 2008

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period10/20/0810/23/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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