Stability of IZO and a-Si:H TFTs processed at low temperature (200 °c)

Korhan Kaftanoglu, Sameer M. Venugopal, Michael Marrs, Aritra Dey, Edward J. Bawolek, David Allee, Doug Loy

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

Mixed-oxide thin-film transistors (TFTs) have been extensively researched due to their improved stability under electrical bias stress compared to amorphous-silicon TFTs. However, there are many challenges before they can reach the manufacturing stage. At the Flexible Display Center (FDC), Arizona State University, Tempe, we are developing a low temperature indiumzincoxide (IZO) TFT process suitable for flexible substrates such as polyethylene naphthalate (PEN). We report the effect of bias stress on the performance of these IZO TFTs and compare it with a-Si:H TFTs. We also report the design and fabrication of a 3.8-in QVGA electrophoretic display on PEN substrate using IZO TFT backplane.

Original languageEnglish (US)
Article number5723783
Pages (from-to)339-343
Number of pages5
JournalIEEE/OSA Journal of Display Technology
Volume7
Issue number6
DOIs
StatePublished - Mar 8 2011

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Keywords

  • Electrophoretic
  • flexible display
  • indium zinc-oxide thin-film transistor (IZO TFT)
  • polyethylene naphthalate (PEN)
  • transparent circuits

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Kaftanoglu, K., Venugopal, S. M., Marrs, M., Dey, A., Bawolek, E. J., Allee, D., & Loy, D. (2011). Stability of IZO and a-Si:H TFTs processed at low temperature (200 °c). IEEE/OSA Journal of Display Technology, 7(6), 339-343. [5723783]. https://doi.org/10.1109/JDT.2011.2107879