Abstract
Mixed-oxide thin-film transistors (TFTs) have been extensively researched due to their improved stability under electrical bias stress compared to amorphous-silicon TFTs. However, there are many challenges before they can reach the manufacturing stage. At the Flexible Display Center (FDC), Arizona State University, Tempe, we are developing a low temperature indiumzincoxide (IZO) TFT process suitable for flexible substrates such as polyethylene naphthalate (PEN). We report the effect of bias stress on the performance of these IZO TFTs and compare it with a-Si:H TFTs. We also report the design and fabrication of a 3.8-in QVGA electrophoretic display on PEN substrate using IZO TFT backplane.
Original language | English (US) |
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Article number | 5723783 |
Pages (from-to) | 339-343 |
Number of pages | 5 |
Journal | IEEE/OSA Journal of Display Technology |
Volume | 7 |
Issue number | 6 |
DOIs | |
State | Published - 2011 |
Keywords
- Electrophoretic
- flexible display
- indium zinc-oxide thin-film transistor (IZO TFT)
- polyethylene naphthalate (PEN)
- transparent circuits
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering