Abstract

We report on the higherature characteristics and stability of both alloyed Ti/Al/Ni/Au ohmic contacts and nonalloyed Al/Au ohmic contacts to n-type GaN at temperatures up to 600 °C in air. The alloyed contacts showed a specific contact resistivity (ρc) of 6.8 - 10-6 Ω cm2 at room temperature after fabrication. ρc did not change with temperature or show degradation after the application of thermal stress at 600 °C for 4 h in air. The ρc of nonalloyed contacts was reduced by two orders of magnitude and stabilized to 5 - 10-6 Ω cm2 after the application of higherature thermal stress. Transmission electron microscopy, scanning transmission electron microscopy, and electron energy loss spectroscopy were used to analyze the metal-semiconductor interface to understand the formation of the low-resistivity and high-stability ohmic contacts at high temperature. Our study reveals the high stability of both alloyed and nonalloyed ohmic contacts for GaN-based electronic devices operating at high temperatures in air.

Original languageEnglish (US)
Article number126502
JournalJapanese Journal of Applied Physics
Volume56
Issue number12
DOIs
StatePublished - Dec 1 2017

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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