Abstract
As CMOS technology begins to face significant scaling challenges, considerable research efforts are being directed to investigate alternative device technologies that can serve as a replacement for CMOS. Spintronic devices, which utilize the spin of electrons as the state variable for computation, have recently emerged as one of the leading candidates for post-CMOS technology. Recent experiments have shown that a nano-magnet can be switched by a spin-polarized current and this has led to a number of novel device proposals over the past few years. In this paper, we provide a review of different mechanisms that manipulate the state of a nano-magnet using current-induced spin-transfer torque and demonstrate how such mechanisms have been engineered to develop device structures for energy-efficient on-chip memory and logic.
Original language | English (US) |
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Article number | 7295574 |
Pages (from-to) | 1-22 |
Number of pages | 22 |
Journal | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems |
Volume | 35 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2016 |
Externally published | Yes |
Keywords
- Boolean logic
- magnetic tunnel junction (MTJ)
- neuromorphic computing
- non-Boolean logic
- nonvolatile memory
- post-CMOS
- spin-transfer torque (STT)
- spintronics
ASJC Scopus subject areas
- Software
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering