Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives

Xuanyao Fong, Yusung Kim, Karthik Yogendra, Deliang Fan, Abhronil Sengupta, Anand Raghunathan, Kaushik Roy

Research output: Contribution to journalArticlepeer-review

106 Scopus citations

Abstract

As CMOS technology begins to face significant scaling challenges, considerable research efforts are being directed to investigate alternative device technologies that can serve as a replacement for CMOS. Spintronic devices, which utilize the spin of electrons as the state variable for computation, have recently emerged as one of the leading candidates for post-CMOS technology. Recent experiments have shown that a nano-magnet can be switched by a spin-polarized current and this has led to a number of novel device proposals over the past few years. In this paper, we provide a review of different mechanisms that manipulate the state of a nano-magnet using current-induced spin-transfer torque and demonstrate how such mechanisms have been engineered to develop device structures for energy-efficient on-chip memory and logic.

Original languageEnglish (US)
Article number7295574
Pages (from-to)1-22
Number of pages22
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume35
Issue number1
DOIs
StatePublished - Jan 2016
Externally publishedYes

Keywords

  • Boolean logic
  • magnetic tunnel junction (MTJ)
  • neuromorphic computing
  • non-Boolean logic
  • nonvolatile memory
  • post-CMOS
  • spin-transfer torque (STT)
  • spintronics

ASJC Scopus subject areas

  • Software
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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