Spice up your MOSFET modelling

Yu Cao, Michael Orshansky, Takashi Sato, Dennis Sylvester, Chenming Hu

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A customizable and predictive BSIM model was generated for devices with Leff down to 12 nm and a wide range of interconnect sizes. The main advantages of this approach over previous work were its applicability to generic technologies as well as the ease of use provided by a Web-based distribution model. These predictive technology models will be useful for circuit design research aimed at processes that were not yet available.

Original languageEnglish (US)
Pages (from-to)17-23
Number of pages7
JournalIEEE Circuits and Devices Magazine
Volume19
Issue number4
DOIs
StatePublished - Jul 2003
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

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