Spectroscopy of a silicon quantum dot

M. Khoury, M. J. Rack, A. Gunther, D. K. Ferry

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

We have fabricated a silicon quantum dot embedded in a metal-oxide-semiconductor field-effect transistor structure. Two side gates deplete the quasi-two-dimensional electron gas created by a top inversion gate. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, the conductance peaks reveal the details of the energy-level structure within the dot and their interactions with one another.

Original languageEnglish (US)
Pages (from-to)1576-1578
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number11
DOIs
StatePublished - Dec 1 1999

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Khoury, M., Rack, M. J., Gunther, A., & Ferry, D. K. (1999). Spectroscopy of a silicon quantum dot. Applied Physics Letters, 74(11), 1576-1578. https://doi.org/10.1063/1.123621