We have fabricated a silicon quantum dot embedded in a metal-oxide-semiconductor field-effect transistor structure. Two side gates deplete the quasi-two-dimensional electron gas created by a top inversion gate. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, the conductance peaks reveal the details of the energy-level structure within the dot and their interactions with one another.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)