Spectroscopy of a silicon quantum dot

M. Khoury; M. J. Rack; A. Gunther; D. K. Ferry

doi:10.1063/1.123621

Spectroscopy of a silicon quantum dot

M. Khoury, M. J. Rack, A. Gunther, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We have fabricated a silicon quantum dot embedded in a metal-oxide-semiconductor field-effect transistor structure. Two side gates deplete the quasi-two-dimensional electron gas created by a top inversion gate. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, the conductance peaks reveal the details of the energy-level structure within the dot and their interactions with one another.

Original language	English (US)
Pages (from-to)	1576-1578
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	11
DOIs	https://doi.org/10.1063/1.123621
State	Published - 1999

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.123621

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title = "Spectroscopy of a silicon quantum dot",

abstract = "We have fabricated a silicon quantum dot embedded in a metal-oxide-semiconductor field-effect transistor structure. Two side gates deplete the quasi-two-dimensional electron gas created by a top inversion gate. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, the conductance peaks reveal the details of the energy-level structure within the dot and their interactions with one another.",

author = "M. Khoury and Rack, {M. J.} and A. Gunther and Ferry, {D. K.}",

year = "1999",

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AU - Khoury, M.

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AU - Gunther, A.

AU - Ferry, D. K.

PY - 1999

Y1 - 1999

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AB - We have fabricated a silicon quantum dot embedded in a metal-oxide-semiconductor field-effect transistor structure. Two side gates deplete the quasi-two-dimensional electron gas created by a top inversion gate. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, the conductance peaks reveal the details of the energy-level structure within the dot and their interactions with one another.

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Spectroscopy of a silicon quantum dot

Abstract

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