Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures

V. Ya Aleshkin, V. I. Gavrilenko, D. M. Gaponova, A. V. Ikonnikov, K. V. Marem'yanin, S. V. Morozov, Yu G. Sadofyev, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Persistent photoconductivity at T = 4.2 K in AlSb/InAs/AlSb heterostructures with two-dimensional (2D) electron gas in InAs quantum wells is studied. Under illumination by IR radiation (ℏω = 0.6-1.2 eV), positive persistent photoconductivity related to the photoionization of deep-level donors is observed. At shorter wavelengths, negative persistent photoconductivity is observed that originates from band-to-band generation of electron-hole pairs with subsequent separation of electrons and holes by the built-in electric field, capture of electrons by ionized donors, and recombination of holes with 2D electrons in InAs. It is found that a sharp drop in the negative photoconductivity takes place at ℏω > 3.1 eV, which can be attributed to the appearance of a new channel for photoionization of deep-level donors in AlSb via electron transitions to the next energy band above the conduction band.

Original languageEnglish (US)
Pages (from-to)22-26
Number of pages5
JournalSemiconductors
Volume39
Issue number1
DOIs
StatePublished - Mar 4 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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    Aleshkin, V. Y., Gavrilenko, V. I., Gaponova, D. M., Ikonnikov, A. V., Marem'yanin, K. V., Morozov, S. V., Sadofyev, Y. G., Johnson, S., & Zhang, Y-H. (2005). Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures. Semiconductors, 39(1), 22-26. https://doi.org/10.1134/1.1852637