Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures

V. Ya Aleshkin, V. I. Gavrilenko, D. M. Gaponova, A. V. Ikonnikov, K. V. Marem'yanin, S. V. Morozov, Yu G. Sadofyev, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Persistent photoconductivity at T = 4.2 K in AlSb/InAs/AlSb heterostructures with two-dimensional (2D) electron gas in InAs quantum wells is studied. Under illumination by IR radiation (ℏω = 0.6-1.2 eV), positive persistent photoconductivity related to the photoionization of deep-level donors is observed. At shorter wavelengths, negative persistent photoconductivity is observed that originates from band-to-band generation of electron-hole pairs with subsequent separation of electrons and holes by the built-in electric field, capture of electrons by ionized donors, and recombination of holes with 2D electrons in InAs. It is found that a sharp drop in the negative photoconductivity takes place at ℏω > 3.1 eV, which can be attributed to the appearance of a new channel for photoionization of deep-level donors in AlSb via electron transitions to the next energy band above the conduction band.

Original languageEnglish (US)
Pages (from-to)22-26
Number of pages5
JournalSemiconductors
Volume39
Issue number1
DOIs
StatePublished - 2005

Fingerprint

Photoconductivity
photoconductivity
Semiconductor quantum wells
Heterojunctions
quantum wells
Photoionization
Electrons
photoionization
electrons
Two dimensional electron gas
electron transitions
Electron transitions
Conduction bands
Band structure
energy bands
electron gas
conduction bands
Lighting
illumination
Electric fields

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Aleshkin, V. Y., Gavrilenko, V. I., Gaponova, D. M., Ikonnikov, A. V., Marem'yanin, K. V., Morozov, S. V., ... Zhang, Y-H. (2005). Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures. Semiconductors, 39(1), 22-26. https://doi.org/10.1134/1.1852637

Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures. / Aleshkin, V. Ya; Gavrilenko, V. I.; Gaponova, D. M.; Ikonnikov, A. V.; Marem'yanin, K. V.; Morozov, S. V.; Sadofyev, Yu G.; Johnson, Shane; Zhang, Yong-Hang.

In: Semiconductors, Vol. 39, No. 1, 2005, p. 22-26.

Research output: Contribution to journalArticle

Aleshkin, VY, Gavrilenko, VI, Gaponova, DM, Ikonnikov, AV, Marem'yanin, KV, Morozov, SV, Sadofyev, YG, Johnson, S & Zhang, Y-H 2005, 'Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures', Semiconductors, vol. 39, no. 1, pp. 22-26. https://doi.org/10.1134/1.1852637
Aleshkin VY, Gavrilenko VI, Gaponova DM, Ikonnikov AV, Marem'yanin KV, Morozov SV et al. Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures. Semiconductors. 2005;39(1):22-26. https://doi.org/10.1134/1.1852637
Aleshkin, V. Ya ; Gavrilenko, V. I. ; Gaponova, D. M. ; Ikonnikov, A. V. ; Marem'yanin, K. V. ; Morozov, S. V. ; Sadofyev, Yu G. ; Johnson, Shane ; Zhang, Yong-Hang. / Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures. In: Semiconductors. 2005 ; Vol. 39, No. 1. pp. 22-26.
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