Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures

V. Ya Aleshkin; V. I. Gavrilenko; D. M. Gaponova; A. V. Ikonnikov; K. V. Marem'yanin; S. V. Morozov; Yu G. Sadofyev; Shane Johnson; Yong-Hang Zhang

doi:10.1134/1.1852637

Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures

V. Ya Aleshkin, V. I. Gavrilenko, D. M. Gaponova, A. V. Ikonnikov, K. V. Marem'yanin, S. V. Morozov, Yu G. Sadofyev, Shane Johnson, Yong-Hang Zhang

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17 Scopus citations

Abstract

Persistent photoconductivity at T = 4.2 K in AlSb/InAs/AlSb heterostructures with two-dimensional (2D) electron gas in InAs quantum wells is studied. Under illumination by IR radiation (ℏω = 0.6-1.2 eV), positive persistent photoconductivity related to the photoionization of deep-level donors is observed. At shorter wavelengths, negative persistent photoconductivity is observed that originates from band-to-band generation of electron-hole pairs with subsequent separation of electrons and holes by the built-in electric field, capture of electrons by ionized donors, and recombination of holes with 2D electrons in InAs. It is found that a sharp drop in the negative photoconductivity takes place at ℏω > 3.1 eV, which can be attributed to the appearance of a new channel for photoionization of deep-level donors in AlSb via electron transitions to the next energy band above the conduction band.

Original language	English (US)
Pages (from-to)	22-26
Number of pages	5
Journal	Semiconductors
Volume	39
Issue number	1
DOIs	https://doi.org/10.1134/1.1852637
State	Published - 2005

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures",

abstract = "Persistent photoconductivity at T = 4.2 K in AlSb/InAs/AlSb heterostructures with two-dimensional (2D) electron gas in InAs quantum wells is studied. Under illumination by IR radiation (ℏω = 0.6-1.2 eV), positive persistent photoconductivity related to the photoionization of deep-level donors is observed. At shorter wavelengths, negative persistent photoconductivity is observed that originates from band-to-band generation of electron-hole pairs with subsequent separation of electrons and holes by the built-in electric field, capture of electrons by ionized donors, and recombination of holes with 2D electrons in InAs. It is found that a sharp drop in the negative photoconductivity takes place at ℏω > 3.1 eV, which can be attributed to the appearance of a new channel for photoionization of deep-level donors in AlSb via electron transitions to the next energy band above the conduction band.",

author = "Aleshkin, {V. Ya} and Gavrilenko, {V. I.} and Gaponova, {D. M.} and Ikonnikov, {A. V.} and Marem'yanin, {K. V.} and Morozov, {S. V.} and Sadofyev, {Yu G.} and Shane Johnson and Yong-Hang Zhang",

year = "2005",

doi = "10.1134/1.1852637",

language = "English (US)",

volume = "39",

pages = "22--26",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Maik Nauka-Interperiodica Publishing",

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T1 - Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures

AU - Aleshkin, V. Ya

AU - Gavrilenko, V. I.

AU - Gaponova, D. M.

AU - Ikonnikov, A. V.

AU - Marem'yanin, K. V.

AU - Morozov, S. V.

AU - Sadofyev, Yu G.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 2005

Y1 - 2005

N2 - Persistent photoconductivity at T = 4.2 K in AlSb/InAs/AlSb heterostructures with two-dimensional (2D) electron gas in InAs quantum wells is studied. Under illumination by IR radiation (ℏω = 0.6-1.2 eV), positive persistent photoconductivity related to the photoionization of deep-level donors is observed. At shorter wavelengths, negative persistent photoconductivity is observed that originates from band-to-band generation of electron-hole pairs with subsequent separation of electrons and holes by the built-in electric field, capture of electrons by ionized donors, and recombination of holes with 2D electrons in InAs. It is found that a sharp drop in the negative photoconductivity takes place at ℏω > 3.1 eV, which can be attributed to the appearance of a new channel for photoionization of deep-level donors in AlSb via electron transitions to the next energy band above the conduction band.

AB - Persistent photoconductivity at T = 4.2 K in AlSb/InAs/AlSb heterostructures with two-dimensional (2D) electron gas in InAs quantum wells is studied. Under illumination by IR radiation (ℏω = 0.6-1.2 eV), positive persistent photoconductivity related to the photoionization of deep-level donors is observed. At shorter wavelengths, negative persistent photoconductivity is observed that originates from band-to-band generation of electron-hole pairs with subsequent separation of electrons and holes by the built-in electric field, capture of electrons by ionized donors, and recombination of holes with 2D electrons in InAs. It is found that a sharp drop in the negative photoconductivity takes place at ℏω > 3.1 eV, which can be attributed to the appearance of a new channel for photoionization of deep-level donors in AlSb via electron transitions to the next energy band above the conduction band.

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Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures

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