Spatial variations of optical properties of semipolar InGaN quantum wells

Saulius Marcinkevičius, Kristina Gelžinyte, Ruslan Ivanov, Yuji Zhao, Shuji Nakamura, Steven P. Denbaars, James S. Speck

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Spatial variations of band potentials and properties of carrier recombination were examined in semipolar (2021) plane InGaN/GaN single quantum wells by scanning near-field photoluminescence (PL) spectroscopy. The quantum wells had In content from 0.11 to 0.36 and were emitting from violet to yellow-green. Near-field scans showed small PL peak energy and linewidth variations with standard deviations below 10 meV, which confirms small alloy composition variations in the quantum wells. The scans revealed large, ∼5 to 10 μm size areas of similar PL parameter values, as opposed to 100 nm scale variations, often reported for InGaN wells. With increased excitation power, an untypical photoluminescence peak energy shift to lower energies was observed. The shift was attributed to density dependent carrier redistribution between nm-scale sites of different potentials. The experimental results show that in the (2021) plane InGaN quantum wells the localization potentials are shallow and the recombination properties are spatially rather uniform, which confirms the high potential of these QWs for photonic applications.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume9363
ISBN (Print)9781628414530
DOIs
StatePublished - 2015
Externally publishedYes
EventGallium Nitride Materials and Devices X - San Francisco, United States
Duration: Feb 9 2015Feb 12 2015

Other

OtherGallium Nitride Materials and Devices X
CountryUnited States
CitySan Francisco
Period2/9/152/12/15

Keywords

  • InGaN
  • LED
  • near-field
  • photoluminescence
  • quantum well
  • semipolar
  • SNOM

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Marcinkevičius, S., Gelžinyte, K., Ivanov, R., Zhao, Y., Nakamura, S., Denbaars, S. P., & Speck, J. S. (2015). Spatial variations of optical properties of semipolar InGaN quantum wells. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 9363). [93631U] SPIE. https://doi.org/10.1117/12.2076973