Spatial variation of luminescence in thick GaN films

F. Bertram; S. Srinivasan; Fernando Ponce; T. Riemann; J. Christen; R. J. Molnar

doi:10.1063/1.1350594

Spatial variation of luminescence in thick GaN films

F. Bertram, S. Srinivasan, Fernando Ponce, T. Riemann, J. Christen, R. J. Molnar

Physics

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18 Scopus citations

Abstract

The spatial variation of the optical properties of hydride vapor-phase epitaxial GaN layers of various thickness has been studied using scanning cathodoluminescence microscopy. A strong improvement of these properties with film thickness is observed in plan view. Cross-sectional studies show a strong redshift of the luminescence in the vicinity of the substrate within a typical thickness of about 2 μm, reflecting a high local impurity content. Above this initial growth region, a strong blueshift is observed up to the energy of fully relaxed high-purity GaN, indicating vertical strain relaxation as well as depletion of residual donors. This is accompanied by a sharp increase in the lateral spectral homogeneity, indicative of a significant improvement in crystalline quality.

Original language	English (US)
Pages (from-to)	1222-1224
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	9
DOIs	https://doi.org/10.1063/1.1350594
State	Published - Feb 26 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The spatial variation of the optical properties of hydride vapor-phase epitaxial GaN layers of various thickness has been studied using scanning cathodoluminescence microscopy. A strong improvement of these properties with film thickness is observed in plan view. Cross-sectional studies show a strong redshift of the luminescence in the vicinity of the substrate within a typical thickness of about 2 μm, reflecting a high local impurity content. Above this initial growth region, a strong blueshift is observed up to the energy of fully relaxed high-purity GaN, indicating vertical strain relaxation as well as depletion of residual donors. This is accompanied by a sharp increase in the lateral spectral homogeneity, indicative of a significant improvement in crystalline quality.",

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T1 - Spatial variation of luminescence in thick GaN films

AU - Bertram, F.

AU - Srinivasan, S.

AU - Ponce, Fernando

AU - Riemann, T.

AU - Christen, J.

AU - Molnar, R. J.

PY - 2001/2/26

Y1 - 2001/2/26

N2 - The spatial variation of the optical properties of hydride vapor-phase epitaxial GaN layers of various thickness has been studied using scanning cathodoluminescence microscopy. A strong improvement of these properties with film thickness is observed in plan view. Cross-sectional studies show a strong redshift of the luminescence in the vicinity of the substrate within a typical thickness of about 2 μm, reflecting a high local impurity content. Above this initial growth region, a strong blueshift is observed up to the energy of fully relaxed high-purity GaN, indicating vertical strain relaxation as well as depletion of residual donors. This is accompanied by a sharp increase in the lateral spectral homogeneity, indicative of a significant improvement in crystalline quality.

AB - The spatial variation of the optical properties of hydride vapor-phase epitaxial GaN layers of various thickness has been studied using scanning cathodoluminescence microscopy. A strong improvement of these properties with film thickness is observed in plan view. Cross-sectional studies show a strong redshift of the luminescence in the vicinity of the substrate within a typical thickness of about 2 μm, reflecting a high local impurity content. Above this initial growth region, a strong blueshift is observed up to the energy of fully relaxed high-purity GaN, indicating vertical strain relaxation as well as depletion of residual donors. This is accompanied by a sharp increase in the lateral spectral homogeneity, indicative of a significant improvement in crystalline quality.

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Spatial variation of luminescence in thick GaN films

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