Some Physical Properties of Undoped Amorphous Silicon Prepared by a New Chemical Vapor Deposition Process Using Iodosilanes

G. Tamizhmani; Michael Cocivera; Richard T. Oakley; Paul Del Bel Belluz

doi:10.1021/cm00010a029

Some Physical Properties of Undoped Amorphous Silicon Prepared by a New Chemical Vapor Deposition Process Using Iodosilanes

G. Tamizhmani, Michael Cocivera, Richard T. Oakley, Paul Del Bel Belluz

Research output: Contribution to journal › Article › peer-review

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Abstract

A new method of preparation of a-Si by thermal decomposition (hetero- and homo-CVD) of di- and triiodosilanes is described. The iodosilanes were prepared by the reaction of phenylsilanes with HI. Uniform films on glass and indium/tin oxide coated glass were prepared with thicknesses ranging upto 4.0 μm. Rutherford backscattering spectrometry (RBS) reveals only a slight amount of oxygen, which appears to be on the surface of the film. In addition RBS indicates the presence of a slight amount of iodine that has a density that decreases gradually as a function of depth. FTIR analysis also indicates a slight amount of oxygen and very little hydrogen.

Original language	English (US)
Pages (from-to)	473-476
Number of pages	4
Journal	Chemistry of Materials
Volume	2
Issue number	4
DOIs	https://doi.org/10.1021/cm00010a029
State	Published - Jul 1 1990
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering
Materials Chemistry

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abstract = "A new method of preparation of a-Si by thermal decomposition (hetero- and homo-CVD) of di- and triiodosilanes is described. The iodosilanes were prepared by the reaction of phenylsilanes with HI. Uniform films on glass and indium/tin oxide coated glass were prepared with thicknesses ranging upto 4.0 μm. Rutherford backscattering spectrometry (RBS) reveals only a slight amount of oxygen, which appears to be on the surface of the film. In addition RBS indicates the presence of a slight amount of iodine that has a density that decreases gradually as a function of depth. FTIR analysis also indicates a slight amount of oxygen and very little hydrogen.",

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AU - Tamizhmani, G.

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AU - Oakley, Richard T.

AU - Del Bel Belluz, Paul

PY - 1990/7/1

Y1 - 1990/7/1

N2 - A new method of preparation of a-Si by thermal decomposition (hetero- and homo-CVD) of di- and triiodosilanes is described. The iodosilanes were prepared by the reaction of phenylsilanes with HI. Uniform films on glass and indium/tin oxide coated glass were prepared with thicknesses ranging upto 4.0 μm. Rutherford backscattering spectrometry (RBS) reveals only a slight amount of oxygen, which appears to be on the surface of the film. In addition RBS indicates the presence of a slight amount of iodine that has a density that decreases gradually as a function of depth. FTIR analysis also indicates a slight amount of oxygen and very little hydrogen.

AB - A new method of preparation of a-Si by thermal decomposition (hetero- and homo-CVD) of di- and triiodosilanes is described. The iodosilanes were prepared by the reaction of phenylsilanes with HI. Uniform films on glass and indium/tin oxide coated glass were prepared with thicknesses ranging upto 4.0 μm. Rutherford backscattering spectrometry (RBS) reveals only a slight amount of oxygen, which appears to be on the surface of the film. In addition RBS indicates the presence of a slight amount of iodine that has a density that decreases gradually as a function of depth. FTIR analysis also indicates a slight amount of oxygen and very little hydrogen.

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Some Physical Properties of Undoped Amorphous Silicon Prepared by a New Chemical Vapor Deposition Process Using Iodosilanes

Abstract

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