Some Physical Properties of Undoped Amorphous Silicon Prepared by a New Chemical Vapor Deposition Process Using Iodosilanes

G. Tamizhmani, Michael Cocivera, Richard T. Oakley, Paul Del Bel Belluz

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A new method of preparation of a-Si by thermal decomposition (hetero- and homo-CVD) of di- and triiodosilanes is described. The iodosilanes were prepared by the reaction of phenylsilanes with HI. Uniform films on glass and indium/tin oxide coated glass were prepared with thicknesses ranging upto 4.0 μm. Rutherford backscattering spectrometry (RBS) reveals only a slight amount of oxygen, which appears to be on the surface of the film. In addition RBS indicates the presence of a slight amount of iodine that has a density that decreases gradually as a function of depth. FTIR analysis also indicates a slight amount of oxygen and very little hydrogen.

Original languageEnglish (US)
Pages (from-to)473-476
Number of pages4
JournalChemistry of Materials
Volume2
Issue number4
DOIs
StatePublished - Jul 1 1990
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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