SnS thin-films by RF sputtering at room temperature

Katy Hartman; J. L. Johnson; Mariana I. Bertoni; Daniel Recht; Michael J. Aziz; Michael A. Scarpulla; Tonio Buonassisi

doi:10.1016/j.tsf.2010.12.186

SnS thin-films by RF sputtering at room temperature

Katy Hartman, J. L. Johnson, Mariana I. Bertoni, Daniel Recht, Michael J. Aziz, Michael A. Scarpulla, Tonio Buonassisi

Research output: Contribution to journal › Article › peer-review

231 Scopus citations

Abstract

Tin monosulfide (SnS) is of interest as a potential solar cell absorber material. We present a preliminary investigation of the effects of sputtering conditions on SnS thin-film structural, optical, and electronic properties. Films were RF sputtered from an SnS target using an argon plasma. Resistivity, stoichiometry, phase, grain size and shape, bandgap, and optical absorption coefficient can be varied by modifying argon pressure for a fixed deposition time. Most films have an indirect bandgap in the range of 1.08-1.18 eV. XRD patterns confirmed the films as mostly crystalline, and grain morphology was examined using profile and surface SEM images.

Original language	English (US)
Pages (from-to)	7421-7424
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	21
DOIs	https://doi.org/10.1016/j.tsf.2010.12.186
State	Published - Aug 31 2011
Externally published	Yes

Keywords

Photovoltaics
RF sputtering
Solar cells
Tin monosulfide
Tin sulfide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2010.12.186

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title = "SnS thin-films by RF sputtering at room temperature",

abstract = "Tin monosulfide (SnS) is of interest as a potential solar cell absorber material. We present a preliminary investigation of the effects of sputtering conditions on SnS thin-film structural, optical, and electronic properties. Films were RF sputtered from an SnS target using an argon plasma. Resistivity, stoichiometry, phase, grain size and shape, bandgap, and optical absorption coefficient can be varied by modifying argon pressure for a fixed deposition time. Most films have an indirect bandgap in the range of 1.08-1.18 eV. XRD patterns confirmed the films as mostly crystalline, and grain morphology was examined using profile and surface SEM images.",

keywords = "Photovoltaics, RF sputtering, Solar cells, Tin monosulfide, Tin sulfide",

author = "Katy Hartman and Johnson, {J. L.} and Bertoni, {Mariana I.} and Daniel Recht and Aziz, {Michael J.} and Scarpulla, {Michael A.} and Tonio Buonassisi",

note = "Funding Information: We thank S. Speakman (XRD), N. Chatterjee (WDS), D. Lange (SEM), and K. Richtman (optical absorption) for the experimental support. R. Gordon, Y.S. Lee, B.K. Newman, M. Winkler, L. Lund, L. Reith, and J.T. Sullivan are acknowledged for their helpful discussions. Funding for this research was provided by the generous support of Doug Spreng and the Chesonis Family Foundation , and by the U.S. Department of Energy under award number DE-SC0001630 . K. Hartman acknowledges the National Science Foundation . D. Recht was supported by the Department of Defense through the National Defense Science and Engineering Graduate Fellowship Program . This work was performed in part at the Center for Nanoscale Systems, supported by the National Science Foundation ECS- 0335765 . Optical absorption computations were run on the Odyssey cluster supported by the Harvard FAS Research Computing Group. ",

year = "2011",

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doi = "10.1016/j.tsf.2010.12.186",

language = "English (US)",

volume = "519",

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T1 - SnS thin-films by RF sputtering at room temperature

AU - Hartman, Katy

AU - Johnson, J. L.

AU - Bertoni, Mariana I.

AU - Recht, Daniel

AU - Aziz, Michael J.

AU - Scarpulla, Michael A.

AU - Buonassisi, Tonio

N1 - Funding Information: We thank S. Speakman (XRD), N. Chatterjee (WDS), D. Lange (SEM), and K. Richtman (optical absorption) for the experimental support. R. Gordon, Y.S. Lee, B.K. Newman, M. Winkler, L. Lund, L. Reith, and J.T. Sullivan are acknowledged for their helpful discussions. Funding for this research was provided by the generous support of Doug Spreng and the Chesonis Family Foundation , and by the U.S. Department of Energy under award number DE-SC0001630 . K. Hartman acknowledges the National Science Foundation . D. Recht was supported by the Department of Defense through the National Defense Science and Engineering Graduate Fellowship Program . This work was performed in part at the Center for Nanoscale Systems, supported by the National Science Foundation ECS- 0335765 . Optical absorption computations were run on the Odyssey cluster supported by the Harvard FAS Research Computing Group.

PY - 2011/8/31

Y1 - 2011/8/31

N2 - Tin monosulfide (SnS) is of interest as a potential solar cell absorber material. We present a preliminary investigation of the effects of sputtering conditions on SnS thin-film structural, optical, and electronic properties. Films were RF sputtered from an SnS target using an argon plasma. Resistivity, stoichiometry, phase, grain size and shape, bandgap, and optical absorption coefficient can be varied by modifying argon pressure for a fixed deposition time. Most films have an indirect bandgap in the range of 1.08-1.18 eV. XRD patterns confirmed the films as mostly crystalline, and grain morphology was examined using profile and surface SEM images.

AB - Tin monosulfide (SnS) is of interest as a potential solar cell absorber material. We present a preliminary investigation of the effects of sputtering conditions on SnS thin-film structural, optical, and electronic properties. Films were RF sputtered from an SnS target using an argon plasma. Resistivity, stoichiometry, phase, grain size and shape, bandgap, and optical absorption coefficient can be varied by modifying argon pressure for a fixed deposition time. Most films have an indirect bandgap in the range of 1.08-1.18 eV. XRD patterns confirmed the films as mostly crystalline, and grain morphology was examined using profile and surface SEM images.

KW - Photovoltaics

KW - RF sputtering

KW - Solar cells

KW - Tin monosulfide

KW - Tin sulfide

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SnS thin-films by RF sputtering at room temperature

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Keywords

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