SnS thin-films by RF sputtering at room temperature

Katy Hartman, J. L. Johnson, Mariana I. Bertoni, Daniel Recht, Michael J. Aziz, Michael A. Scarpulla, Tonio Buonassisi

Research output: Contribution to journalArticle

175 Scopus citations

Abstract

Tin monosulfide (SnS) is of interest as a potential solar cell absorber material. We present a preliminary investigation of the effects of sputtering conditions on SnS thin-film structural, optical, and electronic properties. Films were RF sputtered from an SnS target using an argon plasma. Resistivity, stoichiometry, phase, grain size and shape, bandgap, and optical absorption coefficient can be varied by modifying argon pressure for a fixed deposition time. Most films have an indirect bandgap in the range of 1.08-1.18 eV. XRD patterns confirmed the films as mostly crystalline, and grain morphology was examined using profile and surface SEM images.

Original languageEnglish (US)
Pages (from-to)7421-7424
Number of pages4
JournalThin Solid Films
Volume519
Issue number21
DOIs
StatePublished - Aug 31 2011

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Keywords

  • Photovoltaics
  • RF sputtering
  • Solar cells
  • Tin monosulfide
  • Tin sulfide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Hartman, K., Johnson, J. L., Bertoni, M. I., Recht, D., Aziz, M. J., Scarpulla, M. A., & Buonassisi, T. (2011). SnS thin-films by RF sputtering at room temperature. Thin Solid Films, 519(21), 7421-7424. https://doi.org/10.1016/j.tsf.2010.12.186