Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands

Vijay R. D'Costa, Yanyan Fang, Jay Mathews, Radek Roucka, John Tolle, Jose Menendez, John Kouvetakis

Research output: Contribution to journalArticle

83 Citations (Scopus)

Abstract

The optical properties of Ge1-ySny alloys (y ∼ 0.02) grown by chemical vapor deposition on Si substrates have been studied using spectroscopic ellipsometry and photocurrent spectroscopy. The system shows a 10-fold increase in optical absorption, relative to pure Ge, at wavelengths corresponding to the C-telecommunication band (1550 nm) and a 20-fold increase at wavelengths corresponding to the L-band (1620 nm). Measurements on a series of samples with different thicknesses reveal nearly identical dielectric functions, from which the composition reproducibility of the growth method is estimated to be as good as 0.1%. It is shown that a model that includes excitonic effects reproduces the measured onset of absorption using the direct band gap E0 as essentially the only adjustable parameter of the fit.

Original languageEnglish (US)
Article number115006
JournalSemiconductor Science and Technology
Volume24
Issue number11
DOIs
StatePublished - 2009

Fingerprint

Alloying
Light absorption
alloying
Telecommunication
telecommunication
optical absorption
Wavelength
Spectroscopic ellipsometry
ultrahigh frequencies
Photocurrents
wavelengths
ellipsometry
photocurrents
Chemical vapor deposition
Energy gap
Optical properties
vapor deposition
Spectroscopy
optical properties
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands. / D'Costa, Vijay R.; Fang, Yanyan; Mathews, Jay; Roucka, Radek; Tolle, John; Menendez, Jose; Kouvetakis, John.

In: Semiconductor Science and Technology, Vol. 24, No. 11, 115006, 2009.

Research output: Contribution to journalArticle

@article{4591bb6950464f309ec01c96882bf2eb,
title = "Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands",
abstract = "The optical properties of Ge1-ySny alloys (y ∼ 0.02) grown by chemical vapor deposition on Si substrates have been studied using spectroscopic ellipsometry and photocurrent spectroscopy. The system shows a 10-fold increase in optical absorption, relative to pure Ge, at wavelengths corresponding to the C-telecommunication band (1550 nm) and a 20-fold increase at wavelengths corresponding to the L-band (1620 nm). Measurements on a series of samples with different thicknesses reveal nearly identical dielectric functions, from which the composition reproducibility of the growth method is estimated to be as good as 0.1{\%}. It is shown that a model that includes excitonic effects reproduces the measured onset of absorption using the direct band gap E0 as essentially the only adjustable parameter of the fit.",
author = "D'Costa, {Vijay R.} and Yanyan Fang and Jay Mathews and Radek Roucka and John Tolle and Jose Menendez and John Kouvetakis",
year = "2009",
doi = "10.1088/0268-1242/24/11/115006",
language = "English (US)",
volume = "24",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "11",

}

TY - JOUR

T1 - Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands

AU - D'Costa, Vijay R.

AU - Fang, Yanyan

AU - Mathews, Jay

AU - Roucka, Radek

AU - Tolle, John

AU - Menendez, Jose

AU - Kouvetakis, John

PY - 2009

Y1 - 2009

N2 - The optical properties of Ge1-ySny alloys (y ∼ 0.02) grown by chemical vapor deposition on Si substrates have been studied using spectroscopic ellipsometry and photocurrent spectroscopy. The system shows a 10-fold increase in optical absorption, relative to pure Ge, at wavelengths corresponding to the C-telecommunication band (1550 nm) and a 20-fold increase at wavelengths corresponding to the L-band (1620 nm). Measurements on a series of samples with different thicknesses reveal nearly identical dielectric functions, from which the composition reproducibility of the growth method is estimated to be as good as 0.1%. It is shown that a model that includes excitonic effects reproduces the measured onset of absorption using the direct band gap E0 as essentially the only adjustable parameter of the fit.

AB - The optical properties of Ge1-ySny alloys (y ∼ 0.02) grown by chemical vapor deposition on Si substrates have been studied using spectroscopic ellipsometry and photocurrent spectroscopy. The system shows a 10-fold increase in optical absorption, relative to pure Ge, at wavelengths corresponding to the C-telecommunication band (1550 nm) and a 20-fold increase at wavelengths corresponding to the L-band (1620 nm). Measurements on a series of samples with different thicknesses reveal nearly identical dielectric functions, from which the composition reproducibility of the growth method is estimated to be as good as 0.1%. It is shown that a model that includes excitonic effects reproduces the measured onset of absorption using the direct band gap E0 as essentially the only adjustable parameter of the fit.

UR - http://www.scopus.com/inward/record.url?scp=70450034241&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70450034241&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/24/11/115006

DO - 10.1088/0268-1242/24/11/115006

M3 - Article

AN - SCOPUS:70450034241

VL - 24

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 11

M1 - 115006

ER -