TY - JOUR
T1 - Smart Self-Driving Multilevel Gate Driver for Fast Switching and Crosstalk Suppression of SiC MOSFETs
AU - Liu, Chunhui
AU - Zhang, Zhengda
AU - Liu, Yifu
AU - Si, Yunpeng
AU - Lei, Qin
N1 - Funding Information:
Manuscript received June 30, 2019; revised September 12, 2019; accepted October 6, 2019. Date of publication October 14, 2019; date of current version February 3, 2020. This work was supported by the U.S. National Science Foundation under Award 1847693. Recommended for publication by Associate Editor Shangzhi Pan. (Corresponding author: Chunhui Liu.) The authors are with the School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85281 USA (e-mail: cliu212@asu.edu; zzhan235@asu.edu; yliu457@asu.edu; yunpengs@asu.edu; qin.lei@asu.edu).
Publisher Copyright:
© 2013 IEEE.
PY - 2020/3
Y1 - 2020/3
N2 - Wide-bandgap devices, such as silicon carbide and gallium nitride, have high switching speed potential. However, the actual speed in practical application is limited by circuit parasitics and interaction between high-side switch and low-side switch in a phase-leg configuration, known as crosstalk effect. This article proposes an isolated voltage source gate driver with crosstalk suppression capability to take full advantage of the inherent high switching speed ability of silicon-carbide devices. By applying variable gate voltage through the auxiliary circuit, the crosstalk problem can be mitigated. Using the original gate-source voltage as auxiliary circuit driving signal, the gate driver does not introduce any extra control signals, which avoids additional signal/power isolations and makes the auxiliary circuit very convenient to be implemented on the existing commercial gate driver. The auxiliary circuit makes the gate voltage rise from 0 V other than-5 V when the switch turns on, leading to faster switching speed and lower switching loss compared with a traditional gate driver. LTSPICE simulation and double pulse test experiment based on 1.2-kV/60-A silicon-carbide MOSFETs are conducted to evaluate the crosstalk suppression capability of the proposed gate driver.
AB - Wide-bandgap devices, such as silicon carbide and gallium nitride, have high switching speed potential. However, the actual speed in practical application is limited by circuit parasitics and interaction between high-side switch and low-side switch in a phase-leg configuration, known as crosstalk effect. This article proposes an isolated voltage source gate driver with crosstalk suppression capability to take full advantage of the inherent high switching speed ability of silicon-carbide devices. By applying variable gate voltage through the auxiliary circuit, the crosstalk problem can be mitigated. Using the original gate-source voltage as auxiliary circuit driving signal, the gate driver does not introduce any extra control signals, which avoids additional signal/power isolations and makes the auxiliary circuit very convenient to be implemented on the existing commercial gate driver. The auxiliary circuit makes the gate voltage rise from 0 V other than-5 V when the switch turns on, leading to faster switching speed and lower switching loss compared with a traditional gate driver. LTSPICE simulation and double pulse test experiment based on 1.2-kV/60-A silicon-carbide MOSFETs are conducted to evaluate the crosstalk suppression capability of the proposed gate driver.
KW - Crosstalk suppression
KW - self-driving
KW - silicon-carbide (SiC) MOSFET
KW - smart gate driver
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U2 - 10.1109/JESTPE.2019.2947366
DO - 10.1109/JESTPE.2019.2947366
M3 - Article
AN - SCOPUS:85079442225
SN - 2168-6777
VL - 8
SP - 442
EP - 453
JO - IEEE Journal of Emerging and Selected Topics in Power Electronics
JF - IEEE Journal of Emerging and Selected Topics in Power Electronics
IS - 1
M1 - 8868181
ER -