Slip systems and misfit dislocations in InGaN epilayers

S. Srinivasan, L. Geng, R. Liu, Fernando Ponce, Y. Narukawa, S. Tanaka

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Abstract

The slip systems in the wurtzite structure and the role of threading dislocations in strain relaxation in InGaN alloys were analyzed. The microstructure of InGaN epilayers grown on two GaN layers having different dislocation densities was studied. The InGaN layers were grown by metallorganic chemical vapor deposition (MOCVD) under standard conditions, to a thickness of ∼100 nm, using two types of underlying GaN layers on c-plane sapphire. The spatial variation of light emission was probed by cathodoluminescence(CL) imaging in a scanning electron microscope with a commercial spectrometer.

Original languageEnglish (US)
Pages (from-to)5187-5189
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number25
DOIs
StatePublished - Dec 22 2003

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Srinivasan, S., Geng, L., Liu, R., Ponce, F., Narukawa, Y., & Tanaka, S. (2003). Slip systems and misfit dislocations in InGaN epilayers. Applied Physics Letters, 83(25), 5187-5189. https://doi.org/10.1063/1.1633029