Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis

Saeed Zeinolabedinzadeh, Hanbin Ying, Zachary E. Fleetwood, Nicolas J.H. Roche, Ani Khachatrian, Dale McMorrow, Stephen P. Buchner, Jeffrey H. Warner, Pauline Paki-Amouzou, John D. Cressler

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The single-event transient (SET) response of two different silicon-germanium (SiGe) X-band (8-12 GHz) low noise amplifier (LNA) topologies is fully investigated in this paper. The two LNAs were designed and implemented in 130nm SiGe HBT BiCMOS process technology. Two-photon absorption (TPA) laser pulses were utilized to induce transients within various devices in these LNAs. Impulse response theory is identified as a useful tool for predicting the settling behavior of the LNAs subjected to heavy ion strikes. Comprehensive device and circuit level modeling and simulations were performed to accurately simulate the behavior of the circuits under ion strikes. The simulations agree well with TPA measurements. The simulation, modeling and analysis presented in this paper can be applied for any other circuit topologies for SET modeling and prediction.

Original languageEnglish (US)
Article number7752918
Pages (from-to)125-132
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume64
Issue number1
DOIs
StatePublished - Jan 2017
Externally publishedYes

Fingerprint

linear amplifiers
Germanium
Photons
Silicon
Electric network topology
Networks (circuits)
Low noise amplifiers
germanium
Heterojunction bipolar transistors
topology
Impulse response
Heavy ions
Transient analysis
Laser pulses
simulation
Experiments
Topology
transient response
photons
settling

Keywords

  • Cubesat
  • extreme environments
  • radar
  • radiometer
  • receiver
  • satellite
  • SiGe
  • silicon-germanium
  • single-event transient
  • space missions
  • two-photon absorption laser
  • X-band

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Zeinolabedinzadeh, S., Ying, H., Fleetwood, Z. E., Roche, N. J. H., Khachatrian, A., McMorrow, D., ... Cressler, J. D. (2017). Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis. IEEE Transactions on Nuclear Science, 64(1), 125-132. [7752918]. https://doi.org/10.1109/TNS.2016.2631431

Single-Event Effects in High-Frequency Linear Amplifiers : Experiment and Analysis. / Zeinolabedinzadeh, Saeed; Ying, Hanbin; Fleetwood, Zachary E.; Roche, Nicolas J.H.; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Warner, Jeffrey H.; Paki-Amouzou, Pauline; Cressler, John D.

In: IEEE Transactions on Nuclear Science, Vol. 64, No. 1, 7752918, 01.2017, p. 125-132.

Research output: Contribution to journalArticle

Zeinolabedinzadeh, S, Ying, H, Fleetwood, ZE, Roche, NJH, Khachatrian, A, McMorrow, D, Buchner, SP, Warner, JH, Paki-Amouzou, P & Cressler, JD 2017, 'Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis', IEEE Transactions on Nuclear Science, vol. 64, no. 1, 7752918, pp. 125-132. https://doi.org/10.1109/TNS.2016.2631431
Zeinolabedinzadeh, Saeed ; Ying, Hanbin ; Fleetwood, Zachary E. ; Roche, Nicolas J.H. ; Khachatrian, Ani ; McMorrow, Dale ; Buchner, Stephen P. ; Warner, Jeffrey H. ; Paki-Amouzou, Pauline ; Cressler, John D. / Single-Event Effects in High-Frequency Linear Amplifiers : Experiment and Analysis. In: IEEE Transactions on Nuclear Science. 2017 ; Vol. 64, No. 1. pp. 125-132.
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