Simulation of Raman scattering from nonequilibrium phonons in InP and InAs

D. K. Ferry, E. D. Grann, Kong-Thon Tsen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The measurement of nonequilibrium phonon populations in indium phosphide and indium arsenide on the picosecond time scale is performed using Raman scattering, which monitors the nonequilibrium phonon population. The paper discusses the use of Raman scattering for the experiment and the simulation of the process with an ensemble Monte Carlo technique.

Original languageEnglish (US)
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
PublisherIEEE
Pages108-111
Number of pages4
Publication statusPublished - 1995
EventProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
Duration: May 9 1995May 13 1995

Other

OtherProceedings of the 7th International Conference on Indium Phosphide and Related Materials
CitySapporo, Jpn
Period5/9/955/13/95

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ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Ferry, D. K., Grann, E. D., & Tsen, K-T. (1995). Simulation of Raman scattering from nonequilibrium phonons in InP and InAs. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 108-111). IEEE.