Abstract

Ultrashort gate length pseudomorphic highelectron-mobility transistors (p-HEMTs) based on an InP substrate and featuring a InAs/In 0.053Ga0.47As composite channel have been modeled using a full-band Cellular Monte Carlo simulator. The affects of pair generation by impact ionization are included and we have incorporated a model to allow carriers to tunnel into and out of the channel. Using a gate length scaling analysis, we can obtain a theoretical upper limit for the cut-off frequency, fT, which we find to be 1.7 THz for this specific type of structure. We also examine factors that may be preventing actual devices from achieving such high frequency operation.

Original languageEnglish (US)
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
StatePublished - Nov 22 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: Aug 20 2012Aug 23 2012

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom
CityBirmingham
Period8/20/128/23/12

Keywords

  • Effective gate length
  • Monte Carlo methods
  • Pseudomorphic HEMTs
  • THz transistors

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Simulating InP-based composite channel p-HEMTs with ultrashort gates for THz applications'. Together they form a unique fingerprint.

  • Cite this

    Akis, R., Soligo, R., Marino, F. A., Ferry, D. K., Goodnick, S., & Saraniti, M. (2012). Simulating InP-based composite channel p-HEMTs with ultrashort gates for THz applications. In 2012 12th IEEE International Conference on Nanotechnology, NANO 2012 [6322205] (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2012.6322205