Abstract

Ultrashort gate length pseudomorphic highelectron-mobility transistors (p-HEMTs) based on an InP substrate and featuring a InAs/In 0.053Ga0.47As composite channel have been modeled using a full-band Cellular Monte Carlo simulator. The affects of pair generation by impact ionization are included and we have incorporated a model to allow carriers to tunnel into and out of the channel. Using a gate length scaling analysis, we can obtain a theoretical upper limit for the cut-off frequency, fT, which we find to be 1.7 THz for this specific type of structure. We also examine factors that may be preventing actual devices from achieving such high frequency operation.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Conference on Nanotechnology
DOIs
StatePublished - 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: Aug 20 2012Aug 23 2012

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom
CityBirmingham
Period8/20/128/23/12

Fingerprint

Impact ionization
Cutoff frequency
Tunnels
Transistors
transistors
Simulators
composite materials
Composite materials
Substrates
simulators
tunnels
cut-off
scaling
ionization
indium arsenide

Keywords

  • Effective gate length
  • Monte Carlo methods
  • Pseudomorphic HEMTs
  • THz transistors

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Akis, R., Soligo, R., Marino, F. A., Ferry, D. K., Goodnick, S., & Saraniti, M. (2012). Simulating InP-based composite channel p-HEMTs with ultrashort gates for THz applications. In Proceedings of the IEEE Conference on Nanotechnology [6322205] https://doi.org/10.1109/NANO.2012.6322205

Simulating InP-based composite channel p-HEMTs with ultrashort gates for THz applications. / Akis, R.; Soligo, R.; Marino, F. A.; Ferry, D. K.; Goodnick, Stephen; Saraniti, Marco.

Proceedings of the IEEE Conference on Nanotechnology. 2012. 6322205.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akis, R, Soligo, R, Marino, FA, Ferry, DK, Goodnick, S & Saraniti, M 2012, Simulating InP-based composite channel p-HEMTs with ultrashort gates for THz applications. in Proceedings of the IEEE Conference on Nanotechnology., 6322205, 2012 12th IEEE International Conference on Nanotechnology, NANO 2012, Birmingham, United Kingdom, 8/20/12. https://doi.org/10.1109/NANO.2012.6322205
Akis R, Soligo R, Marino FA, Ferry DK, Goodnick S, Saraniti M. Simulating InP-based composite channel p-HEMTs with ultrashort gates for THz applications. In Proceedings of the IEEE Conference on Nanotechnology. 2012. 6322205 https://doi.org/10.1109/NANO.2012.6322205
Akis, R. ; Soligo, R. ; Marino, F. A. ; Ferry, D. K. ; Goodnick, Stephen ; Saraniti, Marco. / Simulating InP-based composite channel p-HEMTs with ultrashort gates for THz applications. Proceedings of the IEEE Conference on Nanotechnology. 2012.
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