SIMS STUDIES OF SEMI-INSULATING InP AMORPHIZED BY Mg AND Si.

J. D. Obserstar, B. G. Streetman, J. E. baker, Peter Williams

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Using secondary ion mass spectrometry (SIMS) the annealing characteristics of amorphizing implants of Mg and Si in semi-insulating InP have been examined. Substantial redistribution of Mg and Fe occurs during 30 min anneals of InP implanted with 10**1**5 cm** minus **2, 250 kev Mg. Atomic profiles indicate that Mg and Fe are gettered out of the amorphous zone into an implant damaged, bulk region. Examination of electron channelling patterns (ECP) from samples annealed for 30 min at 550 degree and 650 degree C show no discernible patterns at the surface or at depths near the theoretical damage profile peak. Weak channelling patterns are visible at the calculated peak damage depth, however, in samples annealed at 750 degree C for 30 and 60 min. Flat tails of Mg extending over a distance of about 1 mu m are seen in the bulk. Little distribution of Si occurs during 30 min, 750 degree C anneals of 5 multiplied by 10**1**4 cm** minus **2, 240 kev Si implants.

Original languageEnglish (US)
Pages (from-to)1320-1325
Number of pages6
JournalJournal of the Electrochemical Society
Volume129
Issue number6
StatePublished - Jun 1982
Externally publishedYes

Fingerprint

Secondary ion mass spectrometry
secondary ion mass spectrometry
Annealing
Electrons
damage
profiles
examination
annealing
electrons

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Obserstar, J. D., Streetman, B. G., baker, J. E., & Williams, P. (1982). SIMS STUDIES OF SEMI-INSULATING InP AMORPHIZED BY Mg AND Si. Journal of the Electrochemical Society, 129(6), 1320-1325.

SIMS STUDIES OF SEMI-INSULATING InP AMORPHIZED BY Mg AND Si. / Obserstar, J. D.; Streetman, B. G.; baker, J. E.; Williams, Peter.

In: Journal of the Electrochemical Society, Vol. 129, No. 6, 06.1982, p. 1320-1325.

Research output: Contribution to journalArticle

Obserstar, JD, Streetman, BG, baker, JE & Williams, P 1982, 'SIMS STUDIES OF SEMI-INSULATING InP AMORPHIZED BY Mg AND Si.', Journal of the Electrochemical Society, vol. 129, no. 6, pp. 1320-1325.
Obserstar, J. D. ; Streetman, B. G. ; baker, J. E. ; Williams, Peter. / SIMS STUDIES OF SEMI-INSULATING InP AMORPHIZED BY Mg AND Si. In: Journal of the Electrochemical Society. 1982 ; Vol. 129, No. 6. pp. 1320-1325.
@article{0c25f409c2154c1086e52a87f491ee6e,
title = "SIMS STUDIES OF SEMI-INSULATING InP AMORPHIZED BY Mg AND Si.",
abstract = "Using secondary ion mass spectrometry (SIMS) the annealing characteristics of amorphizing implants of Mg and Si in semi-insulating InP have been examined. Substantial redistribution of Mg and Fe occurs during 30 min anneals of InP implanted with 10**1**5 cm** minus **2, 250 kev Mg. Atomic profiles indicate that Mg and Fe are gettered out of the amorphous zone into an implant damaged, bulk region. Examination of electron channelling patterns (ECP) from samples annealed for 30 min at 550 degree and 650 degree C show no discernible patterns at the surface or at depths near the theoretical damage profile peak. Weak channelling patterns are visible at the calculated peak damage depth, however, in samples annealed at 750 degree C for 30 and 60 min. Flat tails of Mg extending over a distance of about 1 mu m are seen in the bulk. Little distribution of Si occurs during 30 min, 750 degree C anneals of 5 multiplied by 10**1**4 cm** minus **2, 240 kev Si implants.",
author = "Obserstar, {J. D.} and Streetman, {B. G.} and baker, {J. E.} and Peter Williams",
year = "1982",
month = "6",
language = "English (US)",
volume = "129",
pages = "1320--1325",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "6",

}

TY - JOUR

T1 - SIMS STUDIES OF SEMI-INSULATING InP AMORPHIZED BY Mg AND Si.

AU - Obserstar, J. D.

AU - Streetman, B. G.

AU - baker, J. E.

AU - Williams, Peter

PY - 1982/6

Y1 - 1982/6

N2 - Using secondary ion mass spectrometry (SIMS) the annealing characteristics of amorphizing implants of Mg and Si in semi-insulating InP have been examined. Substantial redistribution of Mg and Fe occurs during 30 min anneals of InP implanted with 10**1**5 cm** minus **2, 250 kev Mg. Atomic profiles indicate that Mg and Fe are gettered out of the amorphous zone into an implant damaged, bulk region. Examination of electron channelling patterns (ECP) from samples annealed for 30 min at 550 degree and 650 degree C show no discernible patterns at the surface or at depths near the theoretical damage profile peak. Weak channelling patterns are visible at the calculated peak damage depth, however, in samples annealed at 750 degree C for 30 and 60 min. Flat tails of Mg extending over a distance of about 1 mu m are seen in the bulk. Little distribution of Si occurs during 30 min, 750 degree C anneals of 5 multiplied by 10**1**4 cm** minus **2, 240 kev Si implants.

AB - Using secondary ion mass spectrometry (SIMS) the annealing characteristics of amorphizing implants of Mg and Si in semi-insulating InP have been examined. Substantial redistribution of Mg and Fe occurs during 30 min anneals of InP implanted with 10**1**5 cm** minus **2, 250 kev Mg. Atomic profiles indicate that Mg and Fe are gettered out of the amorphous zone into an implant damaged, bulk region. Examination of electron channelling patterns (ECP) from samples annealed for 30 min at 550 degree and 650 degree C show no discernible patterns at the surface or at depths near the theoretical damage profile peak. Weak channelling patterns are visible at the calculated peak damage depth, however, in samples annealed at 750 degree C for 30 and 60 min. Flat tails of Mg extending over a distance of about 1 mu m are seen in the bulk. Little distribution of Si occurs during 30 min, 750 degree C anneals of 5 multiplied by 10**1**4 cm** minus **2, 240 kev Si implants.

UR - http://www.scopus.com/inward/record.url?scp=0020139176&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020139176&partnerID=8YFLogxK

M3 - Article

VL - 129

SP - 1320

EP - 1325

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 6

ER -