SIMS Studies of Semi-Insulating InP Amorphized by Mg and Si

J. D. Oberstar, B. G. Streetman, J. E. Baker, Peter Williams

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Using secondary ion mass spectrometry (SIMS) the annealing characteristics of amorphizing implants of Mg and Si in semi-insulating InP have been examined. Substantial redistribution of Mg and Fe occurs during 30 min anneals of InP implanted with 1015 cm–2, 250 keV Mg. Atomic profiles indicate that Mg and Fe are gettered out of the amorphous zone into an implant damaged, bulk region. Examination of electron channelling patterns (ECP) from samples annealed for 30 min at 550° and 650°C show no discernible patterns at the surface or at depths near the theoretical damage profile peak. Weak channelling patterns are visible at the calculated peak damage depth, however, in samples annealed at 750°C for 30 and 60 min. Flat tails of Mg extending over a distance of about 1 µm are seen in the bulk. Little redistribution of Si occurs during 30 min, 750°C anneals of 5 × 1014 cm−2, 240 keV Si implants. Redistribution of Fe is observed in these Si implanted samples, however, resulting in an accumulation region near the implanted Si peak.

Original languageEnglish (US)
Pages (from-to)1320-1325
Number of pages6
JournalJournal of the Electrochemical Society
Volume129
Issue number6
DOIs
StatePublished - Jun 1982
Externally publishedYes

Keywords

  • anneal
  • implantation
  • impurity redistribution

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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