Silicide formation in Pd-a-Si:H Schottky barriers

M. J. Thompson, N. M. Johnson, R. J. Nemanich, C. C. Tsai

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Abstract

This letter gives the first report of a direct correlation of Schottky barrier characteristics to silicide growth on a-Si:H. Changes in diode ideality factor (from 1.2 to 1.05) produced by annealing can now be directly attributed to growth of Pd2Si as demonstrated by Raman spectroscopy. Unannealed samples show long-term changes in characteristics at room temperature due to slow silicide growth. However, Pd Schottky barriers possess ideal stable characteristics once silicide growth is complete.

Original languageEnglish (US)
Pages (from-to)274-276
Number of pages3
JournalApplied Physics Letters
Volume39
Issue number3
DOIs
StatePublished - Dec 1 1981
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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