@article{0cc6fcd4d35e421887b6e200d91c227c,
title = "Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb",
abstract = "Time-resolved photoluminescence measurements reveal a minority carrier lifetime of >412 ns at 77 K under low excitation for a long-wavelength infrared InAs/InAs 0.72Sb 0.28 type-II superlattice (T2SL). This lifetime represents an order-of-magnitude increase in the minority carrier lifetime over previously reported lifetimes in long-wavelength infrared InAs/Ga 1-xIn xSb T2SLs. The considerably longer lifetime is attributed to a reduction of non-radiative recombination centers with the removal of Ga from the superlattice structure. This lifetime improvement may enable background limited T2SL long-wavelength infrared photodetectors at higher operating temperatures.",
author = "Steenbergen, {E. H.} and Connelly, {B. C.} and Metcalfe, {G. D.} and H. Shen and M. Wraback and D. Lubyshev and Y. Qiu and Fastenau, {J. M.} and Liu, {A. W K} and S. Elhamri and Cellek, {O. O.} and Yong-Hang Zhang",
note = "Funding Information: The authors acknowledge funding by the U. S. Army Research Laboratory and the U. S. Army Research Office MURI program under Grant No. W911NF-10-1-0524 and by the AFOSR under Grant No. FA9550-10-1-0129. E.H.S. appreciates the DOD SMART, ARCS, and SFAz scholarships and acknowledges funding from the ASU Office of the Vice-President for Research and Economic Affairs, the Graduate Research Support Program, and the Graduate College. ",
year = "2011",
month = dec,
day = "19",
doi = "10.1063/1.3671398",
language = "English (US)",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",
}