Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

E. H. Steenbergen, B. C. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. M. Fastenau, A. W K Liu, S. Elhamri, O. O. Cellek, Yong-Hang Zhang

Research output: Contribution to journalArticlepeer-review

212 Scopus citations

Abstract

Time-resolved photoluminescence measurements reveal a minority carrier lifetime of >412 ns at 77 K under low excitation for a long-wavelength infrared InAs/InAs 0.72Sb 0.28 type-II superlattice (T2SL). This lifetime represents an order-of-magnitude increase in the minority carrier lifetime over previously reported lifetimes in long-wavelength infrared InAs/Ga 1-xIn xSb T2SLs. The considerably longer lifetime is attributed to a reduction of non-radiative recombination centers with the removal of Ga from the superlattice structure. This lifetime improvement may enable background limited T2SL long-wavelength infrared photodetectors at higher operating temperatures.

Original languageEnglish (US)
Article number251110
JournalApplied Physics Letters
Volume99
Issue number25
DOIs
StatePublished - Dec 19 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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