Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

E. H. Steenbergen, B. C. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. M. Fastenau, A. W K Liu, S. Elhamri, O. O. Cellek, Yong-Hang Zhang

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Abstract

Time-resolved photoluminescence measurements reveal a minority carrier lifetime of >412 ns at 77 K under low excitation for a long-wavelength infrared InAs/InAs 0.72Sb 0.28 type-II superlattice (T2SL). This lifetime represents an order-of-magnitude increase in the minority carrier lifetime over previously reported lifetimes in long-wavelength infrared InAs/Ga 1-xIn xSb T2SLs. The considerably longer lifetime is attributed to a reduction of non-radiative recombination centers with the removal of Ga from the superlattice structure. This lifetime improvement may enable background limited T2SL long-wavelength infrared photodetectors at higher operating temperatures.

Original languageEnglish (US)
Article number251110
JournalApplied Physics Letters
Volume99
Issue number25
DOIs
StatePublished - Dec 19 2011

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carrier lifetime
minority carriers
life (durability)
wavelengths
operating temperature
photometers
photoluminescence
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb. / Steenbergen, E. H.; Connelly, B. C.; Metcalfe, G. D.; Shen, H.; Wraback, M.; Lubyshev, D.; Qiu, Y.; Fastenau, J. M.; Liu, A. W K; Elhamri, S.; Cellek, O. O.; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 99, No. 25, 251110, 19.12.2011.

Research output: Contribution to journalArticle

Steenbergen, EH, Connelly, BC, Metcalfe, GD, Shen, H, Wraback, M, Lubyshev, D, Qiu, Y, Fastenau, JM, Liu, AWK, Elhamri, S, Cellek, OO & Zhang, Y-H 2011, 'Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb', Applied Physics Letters, vol. 99, no. 25, 251110. https://doi.org/10.1063/1.3671398
Steenbergen, E. H. ; Connelly, B. C. ; Metcalfe, G. D. ; Shen, H. ; Wraback, M. ; Lubyshev, D. ; Qiu, Y. ; Fastenau, J. M. ; Liu, A. W K ; Elhamri, S. ; Cellek, O. O. ; Zhang, Yong-Hang. / Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb. In: Applied Physics Letters. 2011 ; Vol. 99, No. 25.
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AU - Connelly, B. C.

AU - Metcalfe, G. D.

AU - Shen, H.

AU - Wraback, M.

AU - Lubyshev, D.

AU - Qiu, Y.

AU - Fastenau, J. M.

AU - Liu, A. W K

AU - Elhamri, S.

AU - Cellek, O. O.

AU - Zhang, Yong-Hang

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