Si(100) surface corrosion by NH4F studied using high spatial resolution secondary electron imaging in a UHV-STEM

Jeffery Drucker, A. Bandari, Veronica Burrows

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Corrosion of the Si(100) surface by concentrated NH4F solutions was studied using high spatial resolution secondary electron imaging in an ultra-high vacuum scanning transmission electron microscope. Various corrosion mechanisms were investigated by varying the ex-situ chemical treatment of the samples. Entirely different surface morphologies were obtained for surfaces that were kept in solution for short times (approximately minutes) vs. long times (approximately 24 hours) and surfaces which were rinsed in DI H2O vs. those which weren't . These measurements confirm that corrosion continues after the samples are removed from the solution and seems to be correlated with the formation of the Si hexafluorometallate salt. This salt is extremely electron beam sensitive and desorbs in UHV at temperatures below 250 °C.

Original languageEnglish (US)
Title of host publicationSurface Chemical Cleaning and Passivation for Semiconductor Processing
EditorsGregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
PublisherPubl by Materials Research Society
Pages479-484
Number of pages6
ISBN (Print)1558992138
StatePublished - Dec 1 1993
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 13 1993Apr 15 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume315
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period4/13/934/15/93

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Drucker, J., Bandari, A., & Burrows, V. (1993). Si(100) surface corrosion by NH4F studied using high spatial resolution secondary electron imaging in a UHV-STEM. In G. S. Higashi, E. A. Irene, & T. Ohmi (Eds.), Surface Chemical Cleaning and Passivation for Semiconductor Processing (pp. 479-484). (Materials Research Society Symposium Proceedings; Vol. 315). Publ by Materials Research Society.