Shunt diode analysis using light emission for gallium arsenide solar cell predictability

Louis C. Kilmer, Christiana Honsberg, James E. Phillips, Allen M. Barnett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


The use of light emission as a defect analysis technique has been expanded to better differentiate the types of shunt defects and analyze their effects on GaAs solar cells. Light emission from full-size 2-cm × 2-cm space solar cells was detected, recorded, digitized, and enhanced in order to analyze the low-level light emission and the shunt diode's effects. Shunt diodes are of particular importance because they have been found to be the type of defect which is most likely to degrade and cause failure in GaAs solar cells. To analyze how the shunt diodes affect the quality of the solar cell, the pattern of light emission must be studied. In studying the low-level light emission, it was found that the pattern of light emission is different than that of the high-level light emission. The different light patterns show the changing effects of the shunt diodes. It is concluded that the shunt diode dominates over the junction diode at low values of current and that the junction diode dominates over the shunt diode at high values of current.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherPubl by IEEE
Number of pages3
StatePublished - 1988
Externally publishedYes
EventTwentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA
Duration: Sep 26 1988Sep 30 1988


OtherTwentieth IEEE Photovoltaic Specialists Conference - 1988
CityLas Vegas, NV, USA

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics


Dive into the research topics of 'Shunt diode analysis using light emission for gallium arsenide solar cell predictability'. Together they form a unique fingerprint.

Cite this