SEM characterization of silicon nanostructures

Can we meet the challenge?

S. Myhajlenko, A. S. Luby, A. M. Fischer, Fernando Ponce, C. Tracy

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The current semiconductor technology road map for device scaling champions a 4.5 nm gate length in production by 2022. The scanning electron microscope (SEM) as applied to critical dimensions (CD) metrology and associated characterization modes such as electron beam-induced current and cathodoluminescence (CL) has proved to be a workhorse for the semiconductor industry during the microelectronics era. We review some of the challenges facing these techniques in light of the silicon nanotechnology road map. We present some new results using voltage contrast imaging and CL spectroscopy of top-down fabricated silicon nanopillar/nanowires (< 100nm diameter), which highlight the visualization challenge. However, both techniques offer the promise of providing process characterization on the 10-20 nm scale with existing technology. Visualization at the 1 nm scale with these techniques may have to wait for aberration-corrected SEM to become more widely available. Basic secondary electron imaging and CD applications may be separately addressed by the He-ion microscope.

Original languageEnglish (US)
Pages (from-to)310-316
Number of pages7
JournalScanning
Volume30
Issue number4
DOIs
StatePublished - Jul 2008

Fingerprint

Cathodoluminescence
cathodoluminescence
Nanostructures
Electron microscopes
Visualization
electron microscopes
Ion microscopes
Semiconductor materials
Scanning
Imaging techniques
ion microscopes
Silicon
scanning
Induced currents
silicon
nanotechnology
Aberrations
Nanotechnology
microelectronics
Microelectronics

Keywords

  • Cathodoluminescence
  • Plasma processing
  • Silicon nanostructures
  • Spatial resolution
  • Voltage contrast

ASJC Scopus subject areas

  • Instrumentation

Cite this

Myhajlenko, S., Luby, A. S., Fischer, A. M., Ponce, F., & Tracy, C. (2008). SEM characterization of silicon nanostructures: Can we meet the challenge? Scanning, 30(4), 310-316. https://doi.org/10.1002/sca.20115

SEM characterization of silicon nanostructures : Can we meet the challenge? / Myhajlenko, S.; Luby, A. S.; Fischer, A. M.; Ponce, Fernando; Tracy, C.

In: Scanning, Vol. 30, No. 4, 07.2008, p. 310-316.

Research output: Contribution to journalArticle

Myhajlenko, S, Luby, AS, Fischer, AM, Ponce, F & Tracy, C 2008, 'SEM characterization of silicon nanostructures: Can we meet the challenge?', Scanning, vol. 30, no. 4, pp. 310-316. https://doi.org/10.1002/sca.20115
Myhajlenko, S. ; Luby, A. S. ; Fischer, A. M. ; Ponce, Fernando ; Tracy, C. / SEM characterization of silicon nanostructures : Can we meet the challenge?. In: Scanning. 2008 ; Vol. 30, No. 4. pp. 310-316.
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