Abstract

We investigate self-heating effects in single-gate and dual-gate device structures and structures that have AlN (aluminum nitride) and diamond as a buried oxide layer. We also investigate both electrical and thermal enhancement and degradation respectively, due to self-heating effects in fully-depleted SOI devices that have arbitrary transport and crystallographic direction. Our simulation analysis suggests that in all these alternative device technologies self-heating is dramatically reduced in short channel devices due to the pronounced velocity overshoot effect. Moreover, the use of AlN and diamond as a buried oxide layer further reduces the current degradation due to self heating to insignificant values because of the drastic reduction of the thermal resistance of the buried oxide layer.

Original languageEnglish (US)
Title of host publicationCommunications in Computer and Information Science
Pages114-122
Number of pages9
Volume83 CCIS
DOIs
StatePublished - 2011
Event2nd International Conference on Information and Communication Technologies, ICT Innovations 2010 - Ohrid, Macedonia, The Former Yugoslav Republic of
Duration: Sep 12 2010Sep 15 2010

Publication series

NameCommunications in Computer and Information Science
Volume83 CCIS
ISSN (Print)18650929

Other

Other2nd International Conference on Information and Communication Technologies, ICT Innovations 2010
CountryMacedonia, The Former Yugoslav Republic of
CityOhrid
Period9/12/109/15/10

Fingerprint

Heating
Aluminum nitride
Oxides
Diamonds
Degradation
Heat resistance
Hot Temperature

Keywords

  • arbitrary crystallographic directions
  • self-heating effects
  • single and dual-gate devices

ASJC Scopus subject areas

  • Computer Science(all)

Cite this

Raleva, K., Vasileska, D., & Goodnick, S. (2011). Self-heating effects in high performance devices. In Communications in Computer and Information Science (Vol. 83 CCIS, pp. 114-122). (Communications in Computer and Information Science; Vol. 83 CCIS). https://doi.org/10.1007/978-3-642-19325-5_12

Self-heating effects in high performance devices. / Raleva, Katerina; Vasileska, Dragica; Goodnick, Stephen.

Communications in Computer and Information Science. Vol. 83 CCIS 2011. p. 114-122 (Communications in Computer and Information Science; Vol. 83 CCIS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Raleva, K, Vasileska, D & Goodnick, S 2011, Self-heating effects in high performance devices. in Communications in Computer and Information Science. vol. 83 CCIS, Communications in Computer and Information Science, vol. 83 CCIS, pp. 114-122, 2nd International Conference on Information and Communication Technologies, ICT Innovations 2010, Ohrid, Macedonia, The Former Yugoslav Republic of, 9/12/10. https://doi.org/10.1007/978-3-642-19325-5_12
Raleva K, Vasileska D, Goodnick S. Self-heating effects in high performance devices. In Communications in Computer and Information Science. Vol. 83 CCIS. 2011. p. 114-122. (Communications in Computer and Information Science). https://doi.org/10.1007/978-3-642-19325-5_12
Raleva, Katerina ; Vasileska, Dragica ; Goodnick, Stephen. / Self-heating effects in high performance devices. Communications in Computer and Information Science. Vol. 83 CCIS 2011. pp. 114-122 (Communications in Computer and Information Science).
@inproceedings{deaee70552e74f0198f3d7db17cdfbe6,
title = "Self-heating effects in high performance devices",
abstract = "We investigate self-heating effects in single-gate and dual-gate device structures and structures that have AlN (aluminum nitride) and diamond as a buried oxide layer. We also investigate both electrical and thermal enhancement and degradation respectively, due to self-heating effects in fully-depleted SOI devices that have arbitrary transport and crystallographic direction. Our simulation analysis suggests that in all these alternative device technologies self-heating is dramatically reduced in short channel devices due to the pronounced velocity overshoot effect. Moreover, the use of AlN and diamond as a buried oxide layer further reduces the current degradation due to self heating to insignificant values because of the drastic reduction of the thermal resistance of the buried oxide layer.",
keywords = "arbitrary crystallographic directions, self-heating effects, single and dual-gate devices",
author = "Katerina Raleva and Dragica Vasileska and Stephen Goodnick",
year = "2011",
doi = "10.1007/978-3-642-19325-5_12",
language = "English (US)",
isbn = "9783642193248",
volume = "83 CCIS",
series = "Communications in Computer and Information Science",
pages = "114--122",
booktitle = "Communications in Computer and Information Science",

}

TY - GEN

T1 - Self-heating effects in high performance devices

AU - Raleva, Katerina

AU - Vasileska, Dragica

AU - Goodnick, Stephen

PY - 2011

Y1 - 2011

N2 - We investigate self-heating effects in single-gate and dual-gate device structures and structures that have AlN (aluminum nitride) and diamond as a buried oxide layer. We also investigate both electrical and thermal enhancement and degradation respectively, due to self-heating effects in fully-depleted SOI devices that have arbitrary transport and crystallographic direction. Our simulation analysis suggests that in all these alternative device technologies self-heating is dramatically reduced in short channel devices due to the pronounced velocity overshoot effect. Moreover, the use of AlN and diamond as a buried oxide layer further reduces the current degradation due to self heating to insignificant values because of the drastic reduction of the thermal resistance of the buried oxide layer.

AB - We investigate self-heating effects in single-gate and dual-gate device structures and structures that have AlN (aluminum nitride) and diamond as a buried oxide layer. We also investigate both electrical and thermal enhancement and degradation respectively, due to self-heating effects in fully-depleted SOI devices that have arbitrary transport and crystallographic direction. Our simulation analysis suggests that in all these alternative device technologies self-heating is dramatically reduced in short channel devices due to the pronounced velocity overshoot effect. Moreover, the use of AlN and diamond as a buried oxide layer further reduces the current degradation due to self heating to insignificant values because of the drastic reduction of the thermal resistance of the buried oxide layer.

KW - arbitrary crystallographic directions

KW - self-heating effects

KW - single and dual-gate devices

UR - http://www.scopus.com/inward/record.url?scp=79952338165&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952338165&partnerID=8YFLogxK

U2 - 10.1007/978-3-642-19325-5_12

DO - 10.1007/978-3-642-19325-5_12

M3 - Conference contribution

AN - SCOPUS:79952338165

SN - 9783642193248

VL - 83 CCIS

T3 - Communications in Computer and Information Science

SP - 114

EP - 122

BT - Communications in Computer and Information Science

ER -