TY - GEN
T1 - Self-heating effects in high performance devices
AU - Raleva, Katerina
AU - Vasileska, Dragica
AU - Goodnick, Stephen
PY - 2011/3/11
Y1 - 2011/3/11
N2 - We investigate self-heating effects in single-gate and dual-gate device structures and structures that have AlN (aluminum nitride) and diamond as a buried oxide layer. We also investigate both electrical and thermal enhancement and degradation respectively, due to self-heating effects in fully-depleted SOI devices that have arbitrary transport and crystallographic direction. Our simulation analysis suggests that in all these alternative device technologies self-heating is dramatically reduced in short channel devices due to the pronounced velocity overshoot effect. Moreover, the use of AlN and diamond as a buried oxide layer further reduces the current degradation due to self heating to insignificant values because of the drastic reduction of the thermal resistance of the buried oxide layer.
AB - We investigate self-heating effects in single-gate and dual-gate device structures and structures that have AlN (aluminum nitride) and diamond as a buried oxide layer. We also investigate both electrical and thermal enhancement and degradation respectively, due to self-heating effects in fully-depleted SOI devices that have arbitrary transport and crystallographic direction. Our simulation analysis suggests that in all these alternative device technologies self-heating is dramatically reduced in short channel devices due to the pronounced velocity overshoot effect. Moreover, the use of AlN and diamond as a buried oxide layer further reduces the current degradation due to self heating to insignificant values because of the drastic reduction of the thermal resistance of the buried oxide layer.
KW - arbitrary crystallographic directions
KW - self-heating effects
KW - single and dual-gate devices
UR - http://www.scopus.com/inward/record.url?scp=79952338165&partnerID=8YFLogxK
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U2 - 10.1007/978-3-642-19325-5_12
DO - 10.1007/978-3-642-19325-5_12
M3 - Conference contribution
AN - SCOPUS:79952338165
SN - 9783642193248
T3 - Communications in Computer and Information Science
SP - 114
EP - 122
BT - ICT Innovations 2010 - Second International Conference, ICT Innovations 2010, Revised Selected Papers
T2 - 2nd International Conference on Information and Communication Technologies, ICT Innovations 2010
Y2 - 12 September 2010 through 15 September 2010
ER -