Abstract

We investigate self-heating effects in single-gate and dual-gate device structures and structures that have AlN (aluminum nitride) and diamond as a buried oxide layer. We also investigate both electrical and thermal enhancement and degradation respectively, due to self-heating effects in fully-depleted SOI devices that have arbitrary transport and crystallographic direction. Our simulation analysis suggests that in all these alternative device technologies self-heating is dramatically reduced in short channel devices due to the pronounced velocity overshoot effect. Moreover, the use of AlN and diamond as a buried oxide layer further reduces the current degradation due to self heating to insignificant values because of the drastic reduction of the thermal resistance of the buried oxide layer.

Original languageEnglish (US)
Title of host publicationICT Innovations 2010 - Second International Conference, ICT Innovations 2010, Revised Selected Papers
Pages114-122
Number of pages9
DOIs
StatePublished - Mar 11 2011
Event2nd International Conference on Information and Communication Technologies, ICT Innovations 2010 - Ohrid, Macedonia, The Former Yugoslav Republic of
Duration: Sep 12 2010Sep 15 2010

Publication series

NameCommunications in Computer and Information Science
Volume83 CCIS
ISSN (Print)1865-0929

Other

Other2nd International Conference on Information and Communication Technologies, ICT Innovations 2010
CountryMacedonia, The Former Yugoslav Republic of
CityOhrid
Period9/12/109/15/10

    Fingerprint

Keywords

  • arbitrary crystallographic directions
  • self-heating effects
  • single and dual-gate devices

ASJC Scopus subject areas

  • Computer Science(all)
  • Mathematics(all)

Cite this

Raleva, K., Vasileska, D., & Goodnick, S. (2011). Self-heating effects in high performance devices. In ICT Innovations 2010 - Second International Conference, ICT Innovations 2010, Revised Selected Papers (pp. 114-122). (Communications in Computer and Information Science; Vol. 83 CCIS). https://doi.org/10.1007/978-3-642-19325-5_12