Selectively deposited Ru top electrode on Pb(Zr 0.3Ti 0.7)O 3 and Ru step coverage on TiN by digital chemical vapor deposition

Sandwip Dey, J. Goswami, S. Bhaskar, W. Cao, W. C. Noh

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The selective deposition of Ru on hydroxyl-terminated Pb(Zr 0.3Ti 0.7)O 3 (PZT) surface was analyzed using digital chemical vapor deposition (DCVD). Investigations show the ferroelectric hysteresis of Pb(Zr, Ti)O 3 on Ru/sapphire with selectively deposited top Ru electrode by DCVD. The ferroelectric hysteresis of PZT on Ru/sapphire yielded a symmetric hysteresis loop with high remnant polarization. The results show that the DVCD process leads to three-dimensional metal/PZT/metal stacks for high density ferroelectric random access memories.

Original languageEnglish (US)
Pages (from-to)L32-L34
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number5
DOIs
StatePublished - Sep 2004

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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