The selective deposition of Ru on hydroxyl-terminated Pb(Zr 0.3Ti 0.7)O 3 (PZT) surface was analyzed using digital chemical vapor deposition (DCVD). Investigations show the ferroelectric hysteresis of Pb(Zr, Ti)O 3 on Ru/sapphire with selectively deposited top Ru electrode by DCVD. The ferroelectric hysteresis of PZT on Ru/sapphire yielded a symmetric hysteresis loop with high remnant polarization. The results show that the DVCD process leads to three-dimensional metal/PZT/metal stacks for high density ferroelectric random access memories.
|Original language||English (US)|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Sep 2004|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering