Selectively deposited Ru top electrode on Pb(Zr 0.3Ti 0.7)O 3 and Ru step coverage on TiN by digital chemical vapor deposition

Sandwip Dey; J. Goswami; S. Bhaskar; W. Cao; W. C. Noh

doi:10.1116/1.1795248

Selectively deposited Ru top electrode on Pb(Zr _0.3Ti _0.7)O ₃ and Ru step coverage on TiN by digital chemical vapor deposition

Sandwip Dey, J. Goswami, S. Bhaskar, W. Cao, W. C. Noh

Chemical Engineering

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2 Scopus citations

Abstract

The selective deposition of Ru on hydroxyl-terminated Pb(Zr _0.3Ti _0.7)O ₃ (PZT) surface was analyzed using digital chemical vapor deposition (DCVD). Investigations show the ferroelectric hysteresis of Pb(Zr, Ti)O ₃ on Ru/sapphire with selectively deposited top Ru electrode by DCVD. The ferroelectric hysteresis of PZT on Ru/sapphire yielded a symmetric hysteresis loop with high remnant polarization. The results show that the DVCD process leads to three-dimensional metal/PZT/metal stacks for high density ferroelectric random access memories.

Original language	English (US)
Pages (from-to)	L32-L34
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	5
DOIs	https://doi.org/10.1116/1.1795248
State	Published - Sep 2004

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1795248

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Selectively deposited Ru top electrode on Pb(Zr _0.3Ti _0.7)O ₃ and Ru step coverage on TiN by digital chemical vapor deposition. / Dey, Sandwip; Goswami, J.; Bhaskar, S. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 5, 09.2004, p. L32-L34.

Research output: Contribution to journal › Article › peer-review

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title = "Selectively deposited Ru top electrode on Pb(Zr 0.3Ti 0.7)O 3 and Ru step coverage on TiN by digital chemical vapor deposition",

abstract = "The selective deposition of Ru on hydroxyl-terminated Pb(Zr 0.3Ti 0.7)O 3 (PZT) surface was analyzed using digital chemical vapor deposition (DCVD). Investigations show the ferroelectric hysteresis of Pb(Zr, Ti)O 3 on Ru/sapphire with selectively deposited top Ru electrode by DCVD. The ferroelectric hysteresis of PZT on Ru/sapphire yielded a symmetric hysteresis loop with high remnant polarization. The results show that the DVCD process leads to three-dimensional metal/PZT/metal stacks for high density ferroelectric random access memories.",

author = "Sandwip Dey and J. Goswami and S. Bhaskar and W. Cao and Noh, {W. C.}",

note = "Funding Information: The authors would like to thank Mike Racine of Applied Materials for the patterned wafers. The authors also acknowledge, D. Gu, David Wright, and Barry Wilkens of Arizona State University for their assistance with various characterization techniques. S.K.D. appreciates the financial support from NSF-ECS (Contract No. ECS-0000121) and DARPA (Grant No. 15428).",

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AU - Dey, Sandwip

AU - Goswami, J.

AU - Bhaskar, S.

AU - Cao, W.

AU - Noh, W. C.

N1 - Funding Information: The authors would like to thank Mike Racine of Applied Materials for the patterned wafers. The authors also acknowledge, D. Gu, David Wright, and Barry Wilkens of Arizona State University for their assistance with various characterization techniques. S.K.D. appreciates the financial support from NSF-ECS (Contract No. ECS-0000121) and DARPA (Grant No. 15428).

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N2 - The selective deposition of Ru on hydroxyl-terminated Pb(Zr 0.3Ti 0.7)O 3 (PZT) surface was analyzed using digital chemical vapor deposition (DCVD). Investigations show the ferroelectric hysteresis of Pb(Zr, Ti)O 3 on Ru/sapphire with selectively deposited top Ru electrode by DCVD. The ferroelectric hysteresis of PZT on Ru/sapphire yielded a symmetric hysteresis loop with high remnant polarization. The results show that the DVCD process leads to three-dimensional metal/PZT/metal stacks for high density ferroelectric random access memories.

AB - The selective deposition of Ru on hydroxyl-terminated Pb(Zr 0.3Ti 0.7)O 3 (PZT) surface was analyzed using digital chemical vapor deposition (DCVD). Investigations show the ferroelectric hysteresis of Pb(Zr, Ti)O 3 on Ru/sapphire with selectively deposited top Ru electrode by DCVD. The ferroelectric hysteresis of PZT on Ru/sapphire yielded a symmetric hysteresis loop with high remnant polarization. The results show that the DVCD process leads to three-dimensional metal/PZT/metal stacks for high density ferroelectric random access memories.

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Selectively deposited Ru top electrode on Pb(Zr _0.3Ti _0.7)O ₃ and Ru step coverage on TiN by digital chemical vapor deposition

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