Abstract
Numerical simulations of a new micropower transistor configuration are presented. The transistor is a majority carrier device that operates as a current-controlled current-source. Results from a 0.5 μm gate length device indicate a cutoff frequency in the GHz range, for drain currents appropriate to micropower circuit applications.
Original language | English (US) |
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Pages (from-to) | 38-40 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 22 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2001 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering