Schottky junction transistor-micropower circuits at GHz frequencies

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Abstract

Numerical simulations of a new micropower transistor configuration are presented. The transistor is a majority carrier device that operates as a current-controlled current-source. Results from a 0.5 μm gate length device indicate a cutoff frequency in the GHz range, for drain currents appropriate to micropower circuit applications.

Original languageEnglish (US)
Pages (from-to)38-40
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number1
DOIs
StatePublished - Jan 1 2001

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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